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MJE5740AF

Onsemi

MJE5740AF by Onsemi

MJE5740AF by Onsemi is a NPN Power BJT with a hFE of 200, VCE of 300V, and IC of 8A. Ideal for switching applications, this Darlington transistor features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,155 parts In-Stock

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Vyrian

USA . 1,424 parts In-Stock

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1,424

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Problanco Electronics

Mexico . 5,801 parts In-Stock

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SupplyDigital Components

Austria . 3,875 parts In-Stock

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Kulean Microsystems

USA . 2,726 parts In-Stock

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TANS Electronics

Latvia . 2,186 parts In-Stock

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UHIMA Technologies

Türkiye . 875 parts In-Stock

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875

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Corphita

USA . 519 parts In-Stock

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Corohmni

South Africa . 450 parts In-Stock

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Overview

Enhance your electronic projects with the MJE5740AF from Onsemi, a high-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor is ideal for switching applications, with a built-in diode and resistor for added convenience. With a maximum collector-emitter voltage of 300V and a collector current of 8A, this transistor delivers superior performance. Upgrade your projects today with the MJE5740AF and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for various electronic devices and circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor provide added functionality and convenience for circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in power control circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into circuit boards and assembly processes.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

Maximum Collector-Emitter Voltage: 300 V

Can handle higher voltage levels, making it suitable for a wide range of applications requiring high voltage switching.

Maximum Collector Current (IC): 8 A

Capable of handling high current levels, suitable for power applications that require higher current ratings.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures efficient amplification and switching performance in circuits.

Transistor Element Material: SILICON

Silicon transistors offer good performance characteristics such as high switching speeds and low power loss.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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