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MJE4343G

Onsemi

MJE4343G by Onsemi

MJE4343G by Onsemi is a NPN Power BJT with 160V VCE, 16A IC, and 125W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 8 and fT of 1MHz for efficient performance.

Median Price

$4.264

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 25 parts In-Stock

1+ parts

$5.940

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$5.940

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Mouser Electronics

USA . 88 parts In-Stock

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$5.950

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88

$5.950

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Verical

USA . 186 parts In-Stock

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$2.587

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$2.425

186

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$2.587

$2.425

Rochester

USA . 85 parts In-Stock

1+ parts

-

100+ parts

$2.310

1k+ parts

$2.070

10k+ parts

$1.940

85

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$2.310

$2.070

$1.940

Flip Electronics (Authorized)

USA . 39 parts In-Stock

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39

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Digiode

USA . 1,844 parts In-Stock

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$2.432

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1,844

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Vyrian

USA . 5,437 parts In-Stock

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Flip Electronics

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ACDS - Activité Composants Distribution Service

France . 20 parts In-Stock

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Holdelec - ElecDif-Pro

France . 20 parts In-Stock

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Corphita

USA . 1,163 parts In-Stock

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$2.304

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$2.304

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Corohmni

South Africa . 258 parts In-Stock

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$2.560

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258

$2.560

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QUARKTWIN TECHNOLOGY LTD

USA . 22,787 parts In-Stock

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Kulean Microsystems

USA . 3,920 parts In-Stock

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SupplyDigital Components

Austria . 3,692 parts In-Stock

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3,692

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Problanco Electronics

Mexico . 3,021 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Perfect Parts

USA . 971 parts In-Stock

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Infinite Electronics LLP (Excess)

. 117 parts In-Stock

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117

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TANS Electronics

Latvia . 98 parts In-Stock

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UHIMA Technologies

Türkiye . 57 parts In-Stock

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Overview

Unlock the power of innovation with the MJE4343G by Onsemi, a high-quality Power Bipolar Junction Transistor that promises reliable performance in switching applications. Manufactured by Onsemi, a trusted industry leader, this NPN transistor offers unparalleled value and benefits to customers seeking efficiency and precision in their electronic designs. With a maximum operating temperature of 150°C and a maximum collector-emitter voltage of 160V, the MJE4343G ensures optimal functionality and durability. Say goodbye to limitations and hello to endless possibilities with the MJE4343G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in design.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and installation, making it easier to use in different projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficient operation.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability allows for use in applications that require handling of significant power levels.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 160 V

The high voltage rating enables the transistor to be used in circuits with higher voltage requirements.

Maximum Collector Current (IC): 16 A

The high collector current rating allows for handling of substantial current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 1 MHz

The high transition frequency signifies fast operation and response times, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE4343G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE4343G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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