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MJE4352

Inchange Semiconductor

MJE4352 by Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 16 A;

Median Price

$26.820

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 381 parts In-Stock

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Speed Components Ltd

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Digiode

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Vyrian

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MISTER SPROCKETS

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Corohmni

South Africa . 215 parts In-Stock

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Problanco Electronics

Mexico . 3,400 parts In-Stock

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TANS Electronics

Latvia . 2,849 parts In-Stock

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SupplyDigital Components

Austria . 1,977 parts In-Stock

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Kulean Microsystems

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Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE4352 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Inchange Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

800 pF

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3.5 V

Trade Compliance

MJE4352 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Inchange Semiconductor

Our ISC has been committed to the localization of power semiconductor devices for a long time. The product series include: bipolar transistor BJT Field Effect Transistor MOSFET SCR Thyristor Schottky rectifier diode fast recovery diode High Power Thyristors and Rectifiers and Modules RF Small Signal Transistor RF Transistor voltage regulator integrated circuit Our business started in 1991. We continue to strengthen the four advantages of "specialization, specialization and innovation", insist on the pursuit of quality and independent intellectual property rights, own two brands of isc and iscsemi, and have won more than 3,000 customers at home and abroad. We design chips, tape them out in multiple fabs, and package, test, package, and sell them ourselves. We offer over 56,000 part numbers in industry standard, specialty and custom parts. Voltage from 5V to 6000V, current from 5mA to 5000A. We continue to develop new products and have dozens of patents and high-tech products. Our products are widely used in small mobile devices to large industrial systems: automobiles and motorcycles, electronic speed control modules, medical, portable equipment, industrial equipment, consumer products, LED drivers, power switches, motor drives, rail transit, metallurgy Engineering, wind power generation, solar energy, power facilities, steelmaking, etc. In addition, we continue to manufacture and supply discontinued, hard-to-find, unpopular, and dwindling product models. Our factory is located in the innovative Wuxi New District, with complete production, testing, testing, aging, and assessment equipment. We are a high-tech enterprise in Jiangsu Province and have obtained RoHS certification, REACH certification and GB/T 19001-2016/ISO 9001: 2015 quality management system certification. We have an experienced production, design, quality and service team, and continue to provide technical support services for customers.

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