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MJE4353

Onsemi

MJE4353 by Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 16 A;

Median Price

$2.430

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 95 parts In-Stock

1+ parts

$2.430

100+ parts

$2.290

1k+ parts

$2.070

10k+ parts

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95

$2.430

$2.290

$2.070

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Distributors (In-Stock)

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Digiode

USA . 1,730 parts In-Stock

1+ parts

$2.308

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1,730

$2.308

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DigiKey Marketplace

USA . 367 parts In-Stock

1+ parts

$8.830

100+ parts

$7.330

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367

$8.830

$7.330

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American Microsemiconductor Inc.

USA . 1,154 parts In-Stock

1+ parts

$14.240

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$14.240

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Vyrian

USA . 5,153 parts In-Stock

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Holdelec - ElecDif-Pro

France . 101 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 84 parts In-Stock

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R&J Components

USA . 40 parts In-Stock

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Electronic Expediters

USA . 18 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 439 parts In-Stock

1+ parts

$2.187

100+ parts

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439

$2.187

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Corohmni

South Africa . 236 parts In-Stock

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$2.430

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236

$2.430

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Microchip USA

USA . 6,303 parts In-Stock

1+ parts

$24.724

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6,303

$24.724

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TANS Electronics

Latvia . 8,070 parts In-Stock

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8,070

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Kulean Microsystems

USA . 7,857 parts In-Stock

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7,857

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Problanco Electronics

Mexico . 6,641 parts In-Stock

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SupplyDigital Components

Austria . 4,212 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 1,395 parts In-Stock

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1,395

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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501

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SIE Connect GmbH (Excess)

Germany . 130 parts In-Stock

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130

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Continental Prestige Electronics

USA . 95 parts In-Stock

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$2.090

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95

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$2.090

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Assy Fe

Spain . 93 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE4353 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE4353 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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