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MJE4342

Onsemi

MJE4342 by Onsemi

MJE4342 by Onsemi is a NPN BJT transistor with max. Vce of 140V and max. Ic of 16A. With hFE min. of 8, it's ideal for switching applications in electronics due to its single configuration and silicon material, housed in a plastic/epoxy package with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 1,622 parts In-Stock

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Digiode

USA . 518 parts In-Stock

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Resion

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Problanco Electronics

Mexico . 7,082 parts In-Stock

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SupplyDigital Components

Austria . 5,075 parts In-Stock

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Kulean Microsystems

USA . 4,635 parts In-Stock

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TANS Electronics

Latvia . 4,225 parts In-Stock

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Corphita

USA . 1,124 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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UHIMA Technologies

Türkiye . 87 parts In-Stock

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Overview

Unleash the power of innovation with the MJE4342 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-of-the-line quality and reliability in their Power Bipolar Junction Transistors (BJTs). Ideal for switching applications, this NPN transistor offers customers unmatched performance and efficiency. With a maximum collector-emitter voltage of 140V and a maximum collector current of 16A, the MJE4342 is designed to meet all your power needs. Trust Onsemi to deliver cutting-edge technology that brings value and benefits to your projects. Choose the MJE4342 for unparalleled performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

Simplified circuit design with a single transistor, making it easier to integrate into applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Simplified design with only 3 terminals, reducing complexity and providing ease of use.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers stability and ease of mounting in various applications.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain of 8 ensures reliable and consistent performance in amplification and switching circuits.

Maximum Collector-Emitter Voltage: 140 V

Suitable for applications requiring high voltage handling capabilities, ensuring safe operation.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, making it ideal for a wide range of applications.

Maximum Collector Current (IC): 16 A

High collector current rating of 16 A allows for handling of high power levels in switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides reliable soldering connections and ensures long-term durability.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and integration, making it user-friendly.

Case Connection: COLLECTOR

Collector case connection provides easy access and connectivity for external circuitry.

Nominal Transition Frequency (fT): 1 MHz

High transition frequency of 1 MHz enables fast switching speeds and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE4342 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE4342 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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