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MJE4343

Onsemi

MJE4343 by Onsemi

MJE4343 by Onsemi is a NPN BJT transistor with 160V VCEO, 16A IC, and 125W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$5.475

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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DigiKey Marketplace

USA . 328 parts In-Stock

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Ace Electronics

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Digiode

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Vyrian

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American Microsemiconductor Inc.

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A&K Electronics

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Bristol Electronics

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Electronic Expediters

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J2 Sourcing AB

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Component Stockers USA

USA . 333 parts In-Stock

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$4.100

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$3.410

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Corohmni

South Africa . 487 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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TANS Electronics

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SupplyDigital Components

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Authorized Procurement Solutions

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Corphita

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UHIMA Technologies

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Problanco Electronics

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Perfect Parts

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Overview

Upgrade your power systems with the MJE4343 by Onsemi, a high-quality Power BJT transistor designed for switching applications. Onsemi is a trusted manufacturer known for their reliable and efficient components. With a maximum collector-emitter voltage of 160V and a peak power dissipation of 125W, this NPN transistor delivers exceptional performance in a variety of applications. Say goodbye to power interruptions and hello to seamless operations with the MJE4343 - the perfect choice for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and better performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for various projects.

Configuration: SINGLE

Simplifies the circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle high power dissipation and operate efficiently in such scenarios.

Maximum Power Dissipation (Abs): 125 W

With a high power dissipation rating, this transistor can handle significant amounts of power without overheating or getting damaged.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial or automotive applications.

Maximum Collector-Emitter Voltage: 160 V

Allows for high voltage applications, providing greater flexibility in circuit design.

Maximum Collector Current (IC): 16 A

Capable of handling high current levels, making it suitable for power electronics and industrial applications.

Nominal Transition Frequency (fT): 1 MHz

Provides high-frequency performance, allowing for fast switching speeds and efficient operation in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE4343 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE4343 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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