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BUV22G

Onsemi

BUV22G by Onsemi

BUV22G by Onsemi is a NPN power BJT with 250V VCE, 40A IC, and 250W Ptot. Ideal for switching applications due to its single configuration and high transition frequency of 8MHz. Its metal package body and flange mount style make it suitable for high-power requirements in various electronic systems.

Median Price

$24.790

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 260 parts In-Stock

1+ parts

$24.790

100+ parts

$15.430

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260

$24.790

$15.430

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DigiKey

USA . 90 parts In-Stock

1+ parts

$24.790

100+ parts

$14.852

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-

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90

$24.790

$14.852

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Chip1Stop

Japan . 2 parts In-Stock

1+ parts

$603.420

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-

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2

$603.420

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Verical

USA . 600 parts In-Stock

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$16.974

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600

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$16.974

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Rochester

USA . 6 parts In-Stock

1+ parts

-

100+ parts

$14.860

1k+ parts

$13.290

10k+ parts

$12.510

6

-

$14.860

$13.290

$12.510

Distributors (In-Stock)

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Digiode

USA . 909 parts In-Stock

1+ parts

$22.962

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-

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909

$22.962

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Vyrian

USA . 6,453 parts In-Stock

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6,453

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Flip Electronics

USA . 200 parts In-Stock

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200

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Distributors (Availability)

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AZTECH Wire

Italy . 884 parts In-Stock

1+ parts

$14.060

100+ parts

-

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884

$14.060

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Ampacity Inc.

Singapore . 75 parts In-Stock

1+ parts

$14.430

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75

$14.430

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Corphita

USA . 1,061 parts In-Stock

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$21.753

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1,061

$21.753

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Corohmni

South Africa . 255 parts In-Stock

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$21.990

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255

$21.990

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Component Stockers USA

USA . 259 parts In-Stock

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$22.540

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259

$22.540

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Microchip USA

USA . 4,723 parts In-Stock

1+ parts

$55.729

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4,723

$55.729

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Kepictronics

USA . 5,900 parts In-Stock

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5,900

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TANS Electronics

Latvia . 4,511 parts In-Stock

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Problanco Electronics

Mexico . 4,375 parts In-Stock

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SupplyDigital Components

Austria . 643 parts In-Stock

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643

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Native Components

USA . 411 parts In-Stock

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411

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Kulean Microsystems

USA . 389 parts In-Stock

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389

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Perfect Parts

USA . 221 parts In-Stock

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UHIMA Technologies

Türkiye . 192 parts In-Stock

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192

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Northwest PG Solutions

USA . 153 parts In-Stock

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153

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Power up your projects with the BUV22G by Onsemi! This high-quality Power Bipolar Junction Transistor (BJT) offers superior performance in switching applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor provides a maximum collector-emitter voltage of 250V and a maximum collector current of 40A. Whether you're designing industrial control systems or automotive electronics, the BUV22G's reliability and efficiency make it the perfect choice for your next project. Experience the value and benefits that Onsemi's BUV22G brings to your designs today!

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides durability and heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficiency in switching circuits.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability allows the transistor to handle intense power loads without overheating.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 250 V

The high maximum voltage rating enables the transistor to be used in a wide range of voltage applications.

Maximum Collector Current (IC): 40 A

High collector current capability makes this transistor suitable for applications requiring high current handling.

Nominal Transition Frequency (fT): 8 MHz

With a high transition frequency, this transistor can deliver fast switching speeds in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV22G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-204AE

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUV22G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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