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BUV22

Onsemi

BUV22 by Onsemi

BUV22 by Onsemi is a NPN Power BJT with 250V VCE, 40A IC, and 250W Ptot. Ideal for switching applications, it has a hFE of 10 and operates up to 200 °C. The transistor's round flange mount package with tin-lead finish makes it suitable for high-power switching tasks.

Median Price

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Lifecycle Status

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9

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Vyrian

USA . 4,998 parts In-Stock

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Digiode

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Anansix

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ECAB

Sweden . 200 parts In-Stock

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Sunrise Surplus Inc.

USA . 86 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 57 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 48 parts In-Stock

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ComSIT Distribution GmbH

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LittleDiode

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IDEA Electronic Components Group

UK . 1,972 parts In-Stock

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$0.292

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$0.262

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MKK Technologies

India . 1,860 parts In-Stock

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$0.548

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DigiPath Technology Company

USA . 1,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Glotronic Ltd.

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TANS Electronics

Latvia . 2,781 parts In-Stock

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Northwest PG Solutions

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,312 parts In-Stock

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Native Components

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Corohmni

South Africa . 432 parts In-Stock

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Parana Technologies

USA . 377 parts In-Stock

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UHIMA Technologies

Türkiye . 152 parts In-Stock

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Overview

Looking for a reliable and efficient power solution? Look no further than the BUV22 by Onsemi. This high-quality power bipolar junction transistor (BJT) offers unmatched performance in switching applications. With a maximum power dissipation of 250W and a maximum collector current of 40A, this NPN transistor is a powerhouse in a compact package. Whether you're working on industrial automation, automotive electronics, or power supplies, the BUV22 provides the reliability and performance you need. Trust Onsemi to deliver top-notch quality and performance with the BUV22.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and mechanical strength, making it suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are easy to interface with digital circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to control the transistor's operation.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast switching speeds and high efficiency.

Package Shape: ROUND

Round package shape allows for compact and efficient mounting in various applications.

Terminal Form: PIN/PEG

Pin/peg terminals provide a secure and reliable connection for easy integration into circuits.

Maximum Power Dissipation (Abs): 250 W

High power dissipation capability allows for handling of large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables easy mounting and secure attachment in different systems.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures sufficient amplification of the input signal for reliable switching.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures reliable performance in a range of environmental conditions.

Maximum Collector-Emitter Voltage: 250 V

High collector-emitter voltage rating of 250 V allows for operation in circuits with varying voltage levels.

Transistor Element Material: SILICON

Silicon material provides high reliability, low leakage current, and good thermal properties for efficient operation.

Maximum Collector Current (IC): 40 A

High collector current rating of 40 A allows for handling of large current loads in switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and long-term reliability in circuit connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to integrate the transistor into circuits and ensures efficient heat dissipation.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and allows for efficient heat transfer from the transistor.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235 °C ensures reliable soldering during manufacturing and assembly processes.

Nominal Transition Frequency (fT): 8 MHz

High nominal transition frequency of 8 MHz allows for fast switching speeds and high-frequency operation in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV22 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-204AE

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUV22 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-431-1364, 5961144311364

NIIN

144311364

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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