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BUV23

Onsemi

BUV23 by Onsemi

Onsemi's BUV23 is a NPN power BJT with max. collector-emitter voltage of 325V and max. collector current of 30A. It has a min. DC current gain of 8, ideal for switching applications at up to 200 °C operating temperature in flange mount packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Digiode

USA . 6,334 parts In-Stock

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Vyrian

USA . 4,961 parts In-Stock

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Anansix

USA . 2,220 parts In-Stock

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Halfin

Belgium . 250 parts In-Stock

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250

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ECAB

Sweden . 183 parts In-Stock

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Cogito LLC

Ukraine . 30 parts In-Stock

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30

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Fibra_Brandt Electronic GMBH

Germany . 20 parts In-Stock

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LittleDiode

UK . 8 parts In-Stock

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8

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ACDS - Activité Composants Distribution Service

France . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 1,291 parts In-Stock

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$1.234

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$1.110

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MKK Technologies

India . 207 parts In-Stock

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$2.320

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DigiPath Technology Company

USA . 207 parts In-Stock

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$2.320

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TANS Electronics

Latvia . 7,446 parts In-Stock

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Problanco Electronics

Mexico . 6,277 parts In-Stock

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Corphita

USA . 6,268 parts In-Stock

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SupplyDigital Components

Austria . 5,113 parts In-Stock

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Kulean Microsystems

USA . 1,784 parts In-Stock

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Native Components

USA . 1,572 parts In-Stock

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Northwest PG Solutions

USA . 1,464 parts In-Stock

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UHIMA Technologies

Türkiye . 234 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Parana Technologies

USA . 66 parts In-Stock

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$1.475

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Assy Fe

Spain . 26 parts In-Stock

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Overview

Unlock the power of innovation with the BUV23 by Onsemi. Crafted with precision and quality, this Power Bipolar Junction Transistor (BJT) offers unrivaled performance for switching applications. With a maximum collector-emitter voltage of 325V and a collector current of 30A, this NPN transistor is designed to exceed expectations. Its robust construction and durable metal package ensure reliability in any environment. Discover the difference with the BUV23 - where quality meets value for all your power needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better heat dissipation than plastic ones, allowing the transistor to operate at higher power levels without overheating.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration transistors are easier to design and integrate into circuits compared to multi configurations, making them more suitable for various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low saturation voltages, making it ideal for power control and digital circuits.

Package Shape: ROUND

Round packages are compact and easy to mount, allowing for space-saving designs in electronic circuits.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to connect and use in circuit designs, reducing complexity and potential points of failure.

Maximum Operating Temperature: 200 °C

With a high operating temperature of 200 °C, this transistor can withstand high heat environments, ensuring reliable performance in various applications.

Maximum Collector-Emitter Voltage: 325 V

The high maximum collector-emitter voltage rating of 325V allows this transistor to handle high voltage loads and operate safely in power circuits.

Maximum Collector Current (IC): 30 A

With a high collector current rating of 30A, this transistor can handle large current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 8 MHz

The high transition frequency of 8MHz indicates fast response times and good performance at high frequencies, making this transistor suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV23 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

325 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-204AE

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUV23 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-435-6112, 5961144356112

NIIN

144356112

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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