Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The NXP Semiconductors BUV298AV is a single NPN power BJT with max VCEsat of 1.2V, IC of 96A, and VCEO of 450V. Ideal for switching applications, it features a plastic/epoxy package body, rectangular shape, and solder lug terminals.
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Anansix
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Nova Conductors
SIE Connect GmbH - GreenChips
Cyclops Electronics Ltd
IDEA Electronic Components Group
$0.362
$0.326
Corohmni
$0.536
MKK Technologies
$0.682
DigiPath Technology Company
Modulus Dynamics
$1.335
One Stop Electronics
$63.050
Robosynatics
$0.754
$0.738
Lucentia Tech
Lixinc
UNI Independent Distributors
Alle Elektronik GmbH
Argo Parts USA
Aranea Global
Continental Prestige Electronics
Corphita
Parana Technologies
$0.433
The plastic/epoxy construction provides durability and protection for the transistor, ensuring a long lifespan and reliable performance.
The NPN configuration allows for high efficiency and fast switching speeds, making it suitable for various applications including power switching.
The single configuration simplifies circuit design and makes installation easier, saving time and effort for the user.
Designed specifically for switching applications, this transistor offers high performance and efficiency in controlling power flow.
With a low VCEsat value, this transistor minimizes power loss and heat generation, resulting in improved energy efficiency.
The rectangular package shape provides easy integration into circuit designs and allows for efficient use of space on circuit boards.
The solder lug terminals ensure secure and reliable connections, reducing the risk of loose connections and improving overall performance.
The 3 terminals provide flexibility in circuit connections and enable versatile use in different applications.
The flange mount package style offers easy mounting and secure attachment to heat sinks, ensuring effective heat dissipation and prolonging the transistor's lifespan.
The high maximum VCE voltage rating allows for use in high voltage applications, making this transistor suitable for a wide range of switching tasks.
Silicon is a widely used semiconductor material known for its reliability and performance, making it ideal for high-power transistors like this one.
With a high maximum collector current rating, this transistor can handle large amounts of current, making it suitable for high-power switching applications.
The upper terminal position helps simplify circuit layout and connections, making it easier for users to integrate this transistor into their designs.
Power Bipolar Junction Transistors (BJT) BUV298AV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
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Transistor Application:
Transistor Element Material:
Maximum VCEsat:
BUV298AV Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
LL4148
Panjit International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM555CMX
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
BAV99
Siemens
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS138
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
1N4148WS
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002,215
2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.
LM358N
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Meritek Electronics
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
Rectron
Good-ark Electronics
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
Onsemi
M/a-com Technology Solutions
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
LM358M
Texas Instruments
LM358M by Texas Instruments is an Operational Amplifier with 2 functions, featuring a max input offset voltage of 9000 uV and a nominal voltage of 5 V. It is commonly used in applications requiring high common mode rejection ratio and low bias current, such as sensor interfaces and signal conditioning circuits.
SPC TECHNOLOGY/ MULTICOMP
TIP50
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
TIP32C
General Transistor
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
ULN2803A
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
Tt Electronics Plc
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE; Minimum DC Current Gain (hFE): 30;
TIP147
TIP147 by Texas Instruments is a PNP BJT with 125W power dissipation, 10A collector current, and 100V collector-emitter voltage. Ideal for high-power applications like motor control due to its Darlington configuration and built-in resistor. Suitable for use in environments up to 150°C with a single terminal position.
TIP47
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
JAN2N3055
Defense Logistics Agency
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20; JESD-30 Code: O-MBFM-P2;
BCP56-16
Micro Commercial Components
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
TIP111
Bourns
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON;
2SC5200OTU
2SC5200OTU by Onsemi is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 17A, and max. power dissipation of 150W. Ideal for amplifier applications due to its single configuration and silicon transistor element material.
BD13910S
The Onsemi BD13910S is a NPN Power BJT with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.
TIP127G
Changzhou Galaxy Century Microelectronics
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP110
Crimson Semiconductor
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Maximum VCEsat: 2.5 V;
TIP112
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY; Maximum Collector-Emitter Voltage: 100 V;
BCP53-16T3G
BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.
FZT851TA
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 6 A; Package Body Material: PLASTIC/EPOXY;
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 20; Package Shape: ROUND;
TIP42C
TIP42C by Texas Instruments is a PNP BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.
BD138
Continental Device India
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
JANTX2N3055
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-MBFM-P2;
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BUV27
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 13 A; Terminal Form: THROUGH-HOLE; Maximum VCEsat: 1.5 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 12 A; Peak Reflow Temperature (C): 235;
Comset Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Collector Current (IC): 12 A; No. of Terminals: 3;
STMicroelectronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 12 A; Maximum Operating Temperature: 175 Cel;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 120 V; Terminal Finish: TIN SILVER COPPER;
BUV298AV
Power Bipolar Transistors; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 1.2 V; No. of Elements: 1;
North American Philips Discrete Products Div
Power Bipolar Transistors; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum VCEsat: 1.2 V; Maximum Fall Time (tf): 400 ns; No. of Elements: 1;
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 60 A; Package Shape: RECTANGULAR;
BUV26G
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Collector Current (IC): 20 A; Terminal Position: SINGLE;
BUV20
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 8 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A;
BUV23
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 8 MHz; Maximum Collector Current (IC): 30 A; Minimum DC Current Gain (hFE): 8;
BUV21G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 8 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 40 A;
BUV22G
BUV22G by Onsemi is a NPN power BJT with 250V VCE, 40A IC, and 250W Ptot. Ideal for switching applications due to its single configuration and high transition frequency of 8MHz. Its metal package body and flange mount style make it suitable for high-power requirements in various electronic systems.
BUV21
BUV22
BUV26
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 90 V;
BUV27G
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 120 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 8 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A;
BUV24
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 8 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A;
BUV28
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR; Terminal Position: SINGLE;
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