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BUV27

Onsemi

BUV27 by Onsemi

BUV27 by Onsemi is a NPN power BJT with 120V VCE, 12A IC, and 70W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package with through-hole terminals. Operating up to 150°C, it features silicon transistor element material and tin lead terminal finish.

Median Price

$0.998

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Freelance Electronics

USA . 24 parts In-Stock

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$0.302

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Nova Conductors

Japan . 750 parts In-Stock

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$1.694

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Vyrian

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Digiode

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Anansix

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Elcom Components

USA . 597 parts In-Stock

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R&J Components

USA . 585 parts In-Stock

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ABC Electronics Ltd.

UK . 250 parts In-Stock

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LittleDiode

UK . 94 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 61 parts In-Stock

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ComSIT Distribution GmbH

Germany . 40 parts In-Stock

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ComSIT USA

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Halfin

Belgium . 30 parts In-Stock

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ECAB

Sweden . 18 parts In-Stock

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Huijzer Components

Netherlands . 8 parts In-Stock

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Manotoh

Italy . 6 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 150 parts In-Stock

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$1.207

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$1.207

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IDEA Electronic Components Group

UK . 2,168 parts In-Stock

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$1.627

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$1.465

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$1.627

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Continental Prestige Electronics

USA . 3,883 parts In-Stock

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$1.694

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$1.660

3,883

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$1.660

Argo Parts USA

USA . 1,970 parts In-Stock

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$1.694

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Netroflash

USA . 100 parts In-Stock

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$1.694

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$1.609

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$1.575

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$1.694

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$1.609

$1.575

Aztec Data Supply Inc.

USA . 3,264 parts In-Stock

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$1.794

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$1.794

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MKK Technologies

India . 828 parts In-Stock

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$3.060

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828

$3.060

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DigiPath Technology Company

USA . 828 parts In-Stock

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$3.060

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828

$3.060

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AZTECH Wire

Italy . 389 parts In-Stock

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$17.997

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One Stop Electronics

USA . 1,317 parts In-Stock

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$24.050

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Microchip USA

USA . 5,643 parts In-Stock

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$25.200

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$24.840

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$24.840

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$24.840

5,643

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$24.840

Component Stockers USA

USA . 232 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,851 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 8,280 parts In-Stock

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TANS Electronics

Latvia . 7,333 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 6,336 parts In-Stock

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Kulean Microsystems

USA . 5,399 parts In-Stock

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UNI Independent Distributors

Spain . 4,612 parts In-Stock

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Problanco Electronics

Mexico . 4,538 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,933 parts In-Stock

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Parana Technologies

USA . 950 parts In-Stock

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$1.946

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UHIMA Technologies

Türkiye . 395 parts In-Stock

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Assy Fe

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Overview

Upgrade your power systems with the BUV27 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the BUV27 that offer superior performance and reliability. Ideal for switching applications, this NPN transistor boasts a maximum collector-emitter voltage of 120V and a maximum collector current of 12A, making it perfect for a wide range of power control tasks. Trust Onsemi to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile and suitable for a wide range of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy integration into electronic devices or circuit boards.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient and reliable performance in controlling current flow in electronic circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and installation in various electronic devices and equipment.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in connecting to external circuitry and components, allowing for customization and versatile use.

Maximum Power Dissipation (Abs): 70 W

The high maximum power dissipation of 70W allows this transistor to handle heavy loads and operate under demanding conditions without overheating.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 120 V

The maximum collector-emitter voltage of 120V enables this transistor to be used in circuits with higher voltage requirements, increasing its versatility.

Maximum Collector Current (IC): 12 A

The high maximum collector current of 12A allows this transistor to handle large current loads, making it ideal for power switching applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good solderability and conductivity, ensuring reliable electrical connections and ease of assembly.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235°C allows for efficient soldering and rework processes during manufacturing and maintenance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV27 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUV27 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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