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BUV20

Onsemi

BUV20 by Onsemi

BUV20 by Onsemi is a NPN Power BJT with 250W power dissipation, 125V max collector-emitter voltage, and 50A max collector current. Ideal for switching applications, it has a single configuration in a round package with flange mount style.

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Digiode

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Pegasus Components GmbH

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Vyrian

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Digital Electronic Gebert Verwaltungs UG

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ACDS - Activité Composants Distribution Service

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LWI Electronics Inc

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Whistler Technology

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Huijzer Components

Netherlands . 9 parts In-Stock

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ComSIT Distribution GmbH

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Corel Iberica Componentes, S.L.

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Sinequanon

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Fibra_Brandt Electronic GMBH

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IDEA Electronic Components Group

UK . 2,110 parts In-Stock

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MKK Technologies

India . 1,422 parts In-Stock

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DigiPath Technology Company

USA . 1,422 parts In-Stock

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Alle Elektronik GmbH

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Kulean Microsystems

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Northwest PG Solutions

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Problanco Electronics

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Parana Technologies

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Native Components

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor? Look no further than the BUV20 by Onsemi. With its NPN configuration and maximum power dissipation of 250W, this transistor is perfect for switching applications. Its flange mount style and bottom terminal position make it easy to install, while its maximum collector current of 50A ensures optimal performance. Trust in Onsemi's reputation for excellence and choose the BUV20 for all your power transistor needs. Experience the value and benefits that this top-notch product brings to your projects.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent thermal conductivity, allowing for efficient heat dissipation, which helps improve the overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are known for their high current gain and fast switching speeds, making this transistor suitable for various switching applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into electronic circuits, making it user-friendly for engineers and hobbyists.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle high power dissipation and current, making it ideal for use in power electronics and industrial control systems.

Maximum Power Dissipation (Abs): 250 W

The high power dissipation rating of 250 W allows the transistor to handle large amounts of power without overheating, making it suitable for high-power applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperature environments, ensuring reliable performance in various industrial applications.

Maximum Collector-Emitter Voltage: 125 V

The high collector-emitter voltage rating of 125 V allows the transistor to handle high voltage loads, making it suitable for use in power supply circuits and high voltage applications.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures stable and consistent amplification of current in the transistor, providing reliable performance in various circuit designs.

Maximum Collector Current (IC): 50 A

With a maximum collector current rating of 50 A, this transistor can handle high current loads, making it suitable for power switching applications that require high current handling capabilities.

Nominal Transition Frequency (fT): 8 MHz

The high nominal transition frequency of 8 MHz indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV20 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-204AE

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUV20 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-25-129-4303, 5961251294303, 5961-01-551-8933, 5961015518933, 5961-12-309-2404, 5961123092404

NIIN

251294303, 015518933, 123092404

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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