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BUV26G

Onsemi

BUV26G by Onsemi

BUV26G by Onsemi is a NPN Power BJT with 90V VCEO, 20A IC, and 85W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and tin terminal finish.

Median Price

$0.522

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 250 parts In-Stock

1+ parts

$0.522

100+ parts

$0.491

1k+ parts

$0.444

10k+ parts

-

250

$0.522

$0.491

$0.444

-

Distributors (In-Stock)

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Digiode

USA . 2,382 parts In-Stock

1+ parts

$0.496

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2,382

$0.496

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Vyrian

USA . 6,497 parts In-Stock

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6,497

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ComSIT Distribution GmbH

Germany . 7 parts In-Stock

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7

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

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Corphita

USA . 657 parts In-Stock

1+ parts

$0.470

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657

$0.470

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Corohmni

South Africa . 172 parts In-Stock

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$0.522

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172

$0.522

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AZTECH Wire

Italy . 1,082 parts In-Stock

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$15.660

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1,082

$15.660

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Kulean Microsystems

USA . 7,916 parts In-Stock

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7,916

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A-Z Elektronik GmbH

Germany . 6,440 parts In-Stock

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6,440

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TANS Electronics

Latvia . 6,174 parts In-Stock

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Problanco Electronics

Mexico . 5,740 parts In-Stock

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5,740

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Alle Elektronik GmbH

Germany . 4,293 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Perfect Parts

USA . 1,840 parts In-Stock

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Northwest PG Solutions

USA . 1,253 parts In-Stock

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Native Components

USA . 391 parts In-Stock

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391

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SupplyDigital Components

Austria . 372 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 221 parts In-Stock

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221

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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187

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Overview

Power up your electronics with the BUV26G power bipolar junction transistor by Onsemi. Known for their high-quality products, Onsemi delivers reliable solutions for a wide range of applications, including switching. With a maximum power dissipation of 85W and a maximum collector-emitter voltage of 90V, this NPN transistor offers exceptional performance and efficiency. Say goodbye to power limitations and hello to enhanced functionality with the BUV26G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protects the transistor from outside elements, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are widely used and have high common-emitter current and voltage gain, making this product suitable for various applications.

Configuration: SINGLE

Single configuration transistors are easy to use and implement in circuits, reducing complexity and compatibility issues.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures efficient and fast ON/OFF switching, making it ideal for power control circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting in circuit boards, saving space and facilitating assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are suitable for manual soldering, ensuring reliable electrical connections.

Maximum Power Dissipation (Abs): 85 W

With a high power dissipation rating, this transistor can handle significant power loads without overheating, ensuring long-term performance.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and heat dissipation, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can perform reliably in various environments without thermal issues.

Maximum Collector-Emitter Voltage: 90 V

High collector-emitter voltage rating provides robustness and protection against voltage spikes, ensuring stable operation in demanding conditions.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low leakage, and good temperature stability, making this product a reliable choice for applications.

Maximum Collector Current (IC): 20 A

With a high collector current rating, this transistor can handle large currents, making it suitable for high-power applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections over time.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, reducing complexity and enabling easy integration into systems.

Case Connection: COLLECTOR

Collector case connection offers good thermal dissipation and easy mounting, enhancing overall performance and reliability of the transistor.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand reflow soldering processes without damage, ensuring robust assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV26G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUV26G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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