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BUV26

Onsemi

BUV26 by Onsemi

BUV26 by Onsemi is a NPN power BJT with 90V VCE, 20A IC, and 85W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package with through-hole terminals. Operating up to 150 °C, it features a flange mount style and tin-lead finish for collector connection.

Median Price

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Distrelec

Netherlands . 95 parts In-Stock

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Digiode

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Anansix

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Fibra_Brandt Electronic GMBH

Germany . 1,788 parts In-Stock

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Electronic Expediters

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LIBRA Elektronik GmbH

Germany . 800 parts In-Stock

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LWI Electronics Inc

India . 534 parts In-Stock

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Manotoh

Italy . 273 parts In-Stock

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Cogito LLC

Ukraine . 267 parts In-Stock

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ACDS - Activité Composants Distribution Service

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GES GmbH

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Resion

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Belgium . 100 parts In-Stock

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LittleDiode

UK . 97 parts In-Stock

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Huijzer Components

Netherlands . 53 parts In-Stock

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ECAB

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Sinequanon

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Corel Iberica Componentes, S.L.

Spain . 15 parts In-Stock

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ABC Electronics Ltd.

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DF Sales Co.

USA . 8 parts In-Stock

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DF Sales Co.

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ComSIT Distribution GmbH

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Microfarads

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,800 parts In-Stock

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$0.277

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$0.249

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MKK Technologies

India . 533 parts In-Stock

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$0.521

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DigiPath Technology Company

USA . 533 parts In-Stock

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$0.521

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Component Stockers USA

USA . 453 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 5,624 parts In-Stock

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Corphita

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Alle Elektronik GmbH

Germany . 4,927 parts In-Stock

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CPlus Electronics

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Northwest PG Solutions

USA . 3,640 parts In-Stock

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TANS Electronics

Latvia . 2,617 parts In-Stock

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UNI Independent Distributors

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SupplyDigital Components

Austria . 1,968 parts In-Stock

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Native Components

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Parana Technologies

USA . 730 parts In-Stock

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Kulean Microsystems

USA . 664 parts In-Stock

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Corohmni

South Africa . 162 parts In-Stock

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Overview

Elevate your power control capabilities with the BUV26 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 90V and can handle up to 20A of current. With a package style designed for easy flange mount installation, the BUV26 is perfect for a variety of applications where high power dissipation and efficient performance are essential. Upgrade your power management solutions today with the BUV26 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits and amplifiers, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes installation easier, ideal for applications that require a straightforward setup.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid switching and high frequencies effectively.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on a circuit board, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board, reducing the risk of connectivity issues.

Maximum Power Dissipation (Abs): 85 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring stable performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy mounting and heat dissipation, making it suitable for applications where thermal management is crucial.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to operate reliably in a wide range of environments without compromising performance.

Maximum Collector-Emitter Voltage: 90 V

The high collector-emitter voltage rating makes this transistor suitable for applications that require high voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency, ensuring optimal performance and longevity in various applications.

Maximum Collector Current (IC): 20 A

With a high collector current rating, this transistor can handle large current loads, making it ideal for high-power applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish ensures good solderability and corrosion resistance, extending the lifespan of the transistor.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, making it easier to integrate this transistor into a circuit.

Case Connection: COLLECTOR

The case connection at the collector makes it convenient for circuit design and ensures proper grounding, improving overall performance.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature, this transistor can withstand the soldering process without damage, ensuring a secure connection during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV26 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUV26 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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