Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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BUB323Z
Onsemi
BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.
COLLECTOR
10 A
350 V
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
500
R-PSSO-G2
e0
1
2
175 Cel
-65 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
NPN
150 W
Not Qualified
Other Transistors
YES
Tin/Lead (Sn/Pb)
GULL WING
SINGLE
30
SWITCHING
SILICON
2 MHz
NCV1413BDR2
NCV1413BDR2 by Onsemi is a NPN BJT transistor for switching applications. It has a min hFE of 1000, max VCE of 50V, and max IC of 0.5A. This surface-mount transistor comes in a small outline package with 16 terminals and Gull Wing form factor, ideal for compact electronic designs.
LOGIC LEVEL COMPATIBLE
.5 A
50 V
COMPLEX
1000
R-PDSO-G16
7
16
TIN LEAD
DUAL
BUT70W
STMicroelectronics
BUT70W by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 125 V. Ideal for high-performance electronic circuits.
125 V
TO-247
R-PSFM-T3
e3
3
150 Cel
FLANGE MOUNT
200 W
NO
Matte Tin (Sn)
THROUGH-HOLE
BUX98APW
BUX98APW by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 450 V. Ideal for high-performance electronic circuits.
24 A
450 V
MATTE TIN
BD437T
The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.
4 A
45 V
40
TO-225AA
36 W
3 MHz
BD682T
BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
100 V
750
PNP
40 W
AMPLIFIER
10 MHz
ST1802FH
ST1802FH by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
ISOLATED
600 V
4
STF715
STF715 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max collector-emitter voltage of 80V and a power dissipation of 1.4W. It operates efficiently at up to 150 °C with a min DC current gain (hFE) of 40. This compact surface mount transistor is ideal for various electronic circuits.
1.5 A
80 V
R-PSSO-F3
260
1.4 W
FLAT
50 MHz
STN715
STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.
R-PDSO-G4
1.6 W
Matte Tin (Sn) - annealed
TIP142TU
Fairchild Semiconductor
TIP142TU by Fairchild Semiconductor is a NPN power BJT with Darlington configuration, 125W power dissipation, and 10A collector current. Ideal for high-power applications requiring a max collector-emitter voltage of 100V and min DC current gain of 500 hFE. Commonly used in flange mount setups due to its rectangular package shape.
125 W
BD13710S
Fairchild Semiconductor's BD13710S is a NPN BJT transistor with 60V VCE, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.
60 V
63
TO-126
13 W
250 MHz
BD238S
Fairchild Semiconductor's BD238S is a PNP BJT transistor with 80V VCE, 2A IC, and 25W power dissipation. Ideal for switching applications due to its single configuration and 3MHz fT. The through-hole package with matte tin finish makes it suitable for various electronic designs.
2 A
25
25 W
BDW93CFTU
Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.
12 A
DARLINGTON WITH BUILT-IN DIODE
100
30 W
BDX34BTU
Fairchild Semiconductor's BDX34BTU is a PNP Darlington transistor with 70W power dissipation, 80V collector-emitter voltage, and 10A collector current. Ideal for switching applications, it has a min DC current gain of 750 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.
DARLINGTON
TO-220AB
70 W
BDX53BTU
Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.
8 A
60 W
20 MHz
KSA1220AYSTSTU
KSA1220AYSTSTU by Fairchild is a PNP BJT transistor with 160 min hFE, 1.2A IC, and 175MHz fT. Ideal for amplifier applications, it has a max operating temperature of 150°C and can handle up to 20W power dissipation in a rectangular package with matte tin finish.
1.2 A
160 V
160
20 W
175 MHz
KSC5042MSTU
KSC5042MSTU by Fairchild Semiconductor is a NPN Power BJT with 900V VCEO, 0.1A IC, and 4W Ptot. Ideal for switching applications due to its single configuration and hFE of 30. Features through-hole terminals in a rectangular package suitable for flange mounting.
HIGH RELIABILITY
.1 A
900 V
4 W
ST2310DHI
ST2310DHI from STMicroelectronics is a robust NPN BJT designed for efficient switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 600V. Ideal for high-performance electronic circuits.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
5.5
NOT SPECIFIED
55 W
KSC2335YTU
KSC2335YTU by Fairchild Semiconductor is a NPN BJT transistor with 400V VCEO, 7A IC, and 40W Ptot. Ideal for switching applications due to its single configuration and hFE of 40. Package style is flange mount with through-hole terminals.
7 A
400 V
KSD401FYTU
KSD401FYTU by Fairchild Semiconductor is a NPN BJT transistor with 150V VCEO, 2A IC, and 25W Ptot. It is commonly used in amplifier applications due to its hFE of 120 and fT of 5MHz. The package style is flange mount with a rectangular shape and through-hole terminals.
150 V
120
5 MHz
STN888
STN888 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 5 A. It operates at up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.
5 A
30 V
70
STSA851-AP
STSA851-AP by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a single configuration in a cylindrical package with matte tin finish. Operating up to 150°C, it offers a min hFE of 30 and dissipation of 1.1W.
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
1.1 W
BOTTOM
130 MHz
STSA851
STSA851 by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 1.1W in a cylindrical package with matte tin finish for through-hole mounting.
ST83003
ST83003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs with through-hole mounting.
ST93003
ST93003 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient power management in electronic circuits.
STN749
STN749 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 25 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.
3 A
25 V
15
STD1805-1
STD1805-1 from STMicroelectronics is a robust NPN BJT designed for switching applications, featuring a max power dissipation of 15W and collector current of 5A. It operates efficiently up to 150 °C with a collector-emitter voltage of 60V. Ideal for various electronic circuits, it ensures reliable performance in compact designs.
20
TO-251AA
R-PSIP-T3
IN-LINE
15 W
150 MHz
STD1805T4
STD1805T4 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector current of 5A, and operates up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
TO-252AA
STN1802
STN1802 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for compact electronic designs with surface mount capabilities.
STSA1805
STSA1805 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for efficient circuit designs in various electronic devices.
ST13007DFP
ST13007DFP by STMicroelectronics is a NPN BJT transistor with 400V VCEO, 8A IC, and 36W Ptot. It's used for switching applications due to its single configuration with built-in diode. The package style is flange mount with through-hole terminals in a rectangular shape.
SINGLE WITH BUILT-IN DIODE
8
MJL4281A
The Onsemi MJL4281A is a NPN BJT transistor with 230W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 350V, max collector current of 15A, and min DC current gain of 10. The package style is flange mount with through-hole terminals in a rectangular shape.
15 A
10
TO-264AA
230 W
35 MHz
MJL4302A
The Onsemi MJL4302A is a PNP BJT transistor with 230W power dissipation, 350V max. collector-emitter voltage, and 15A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
STD790AT4
STD790AT4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector currents of 3A. Its compact surface mount design ensures efficient performance in electronic circuits.
90
100 MHz
MJD112RL
MJD112RL by Onsemi is a NPN BJT with Darlington configuration, built-in diode and resistor. It has a max power dissipation of 20W, hFE of 200, and operates up to 150 °C. Ideal for switching applications due to its high collector current of 2A and max voltage of 100V.
200
25 MHz
BD436T
The Onsemi BD436T is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min hFE of 50 and fT of 3MHz, it operates at up to 150 °C, making it suitable for high-power electronic circuits.
32 V
50
MJD128T4
MJD128T4 by Onsemi is a PNP Darlington transistor with 120V max collector-emitter voltage, 8A max collector current, and 20W max power dissipation. Ideal for switching applications in small outline packages with Gull Wing terminals.
120 V
ST2310FX
ST2310FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
6.5
245
MJD42CRL
MJD42CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications in small outline packages, it operates up to 140 °C with a min hFE of 15.
6 A
140 Cel
BCX53H6327XTSA1
Infineon Technologies
BCX53H6327XTSA1 by Infineon Technologies is a PNP BJT transistor with 80V VCEO, 1A IC, and 2W power dissipation. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. This surface-mount transistor in a small outline package is AEC-Q101 compliant.
1 A
2 W
AEC-Q101
TIN
125 MHz
MJE15034
MJE15034 by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.
50 W
30 MHz
MJE15035
MJE15035 by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max. collector-emitter voltage, and 4A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
2STN2550
2STN2550 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 5 A, a collector-emitter voltage of 50 V, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.
80
MJD44H11-001
Onsemi's MJD44H11-001 is a NPN BJT transistor with 80V VCE, 8A IC, and 20W Pd. Ideal for switching applications, it has hFE of 40, operates up to 150 °C, and features SILICON element material. Suitable for various power electronics projects requiring high-speed performance.
85 MHz
MJD45H11-001
MJD45H11-001 by Onsemi is a PNP BJT transistor with 80V VCEO, 8A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 40 and operates up to 150 °C. The package style is in-line with through-hole terminals.
90 MHz
BUL1203EFP
BUL1203EFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 550 V, a power dissipation of 36 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
550 V
9
ST2001FX
ST2001FX by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.
5
BULB49DT4
BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
TO-263AB
80 W
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