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BD682T

Onsemi

BD682T by Onsemi

BD682T by Onsemi is a PNP BJT transistor with 40W power dissipation, 4A collector current, and 10MHz transition frequency. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

Median Price

$1.748

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Master Electronics

USA . 575 parts In-Stock

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$1.550

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$1.180

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575

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$1.180

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Verical

USA . 570 parts In-Stock

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$1.945

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$1.430

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570

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$1.945

$1.430

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Chip Stock

USA . 69,000 parts In-Stock

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Vyrian

USA . 8,670 parts In-Stock

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Digiode

USA . 1,589 parts In-Stock

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1,589

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Distributors (Availability)

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Corohmni

South Africa . 202 parts In-Stock

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$1.550

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202

$1.550

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Native Components

USA . 429 parts In-Stock

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$1.602

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429

$1.602

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Northwest PG Solutions

USA . 1,863 parts In-Stock

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$1.763

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1,863

$1.763

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AZTECH Wire

Italy . 1,155 parts In-Stock

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$19.670

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Problanco Electronics

Mexico . 5,289 parts In-Stock

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SupplyDigital Components

Austria . 3,633 parts In-Stock

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Corphita

USA . 2,228 parts In-Stock

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TANS Electronics

Latvia . 944 parts In-Stock

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Kulean Microsystems

USA . 643 parts In-Stock

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UHIMA Technologies

Türkiye . 314 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BD682T Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor features a Darlington configuration with a built-in diode and resistor, making it ideal for amplifier applications. With a maximum power dissipation of 40W and a high DC current gain of 750, this transistor offers unmatched performance and reliability. Whether you're designing audio amplifiers or motor control systems, the BD682T delivers unparalleled value and efficiency, ensuring your projects stand out from the competition. Upgrade to the BD682T today and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits, enhancing circuit design flexibility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating necessary components, saving space and improving reliability.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring high performance and efficiency in signal amplification.

Package Shape: RECTANGULAR

Facilitates easy PCB layout and mounting, enhancing convenience during assembly.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections on the PCB, reducing the risk of malfunctions.

No. of Terminals: 3

Simplifies circuit connection and layout with a minimal number of terminals.

Maximum Power Dissipation (Abs): 40 W

Handles high power levels efficiently, suitable for applications requiring high power dissipation.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and heat dissipation, improving overall product performance and reliability.

Minimum DC Current Gain (hFE): 750

Provides high current gain, ensuring reliable and efficient amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

Suitable for operation in high-temperature environments, ensuring stable performance under varying conditions.

Maximum Collector-Emitter Voltage: 100 V

Capable of handling high voltage levels, suitable for applications requiring high-voltage switching.

Transistor Element Material: SILICON

Offers high reliability and performance as silicon is a common material used in transistor manufacturing.

Maximum Collector Current (IC): 4 A

Capable of handling high currents, suitable for power applications that require high collector current.

Terminal Finish: TIN LEAD

Provides a reliable and durable terminal finish, ensuring secure connections and longevity.

Terminal Position: SINGLE

Simplifies PCB layout and assembly by having all terminals on one side of the package.

Peak Reflow Temperature °C: 235

Withstands high reflow temperatures during soldering, ensuring reliable solder joints and connections.

Nominal Transition Frequency (fT): 10 MHz

Indicates the maximum frequency at which the transistor can reliably operate, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD682T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD682T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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