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BD682S

Onsemi

BD682S by Onsemi

The Onsemi BD682S is a PNP Darlington BJT transistor with 40W power dissipation, hFE of 750, and IC of 4A. Ideal for switching applications in electronics due to its high collector-emitter voltage of 100V and max operating temperature of 150°C.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 20 parts In-Stock

1+ parts

$0.263

100+ parts

$0.250

1k+ parts

$0.250

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20

$0.263

$0.250

$0.250

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DigiKey

USA . 6,000 parts In-Stock

1+ parts

-

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$0.170

6,000

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$0.170

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Rochester

USA . 1,284 parts In-Stock

1+ parts

-

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$0.240

1k+ parts

$0.200

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$0.178

1,284

-

$0.240

$0.200

$0.178

Farnell

UK . 1,284 parts In-Stock

1+ parts

-

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$0.199

1,284

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$0.199

Verical

USA . 1,232 parts In-Stock

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$0.289

1,232

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$0.289

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,232 parts In-Stock

1+ parts

$0.244

100+ parts

-

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1,232

$0.244

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-

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Nova Conductors

Japan . 17 parts In-Stock

1+ parts

$0.307

100+ parts

-

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17

$0.307

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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DigiKey Marketplace

USA . 6,000 parts In-Stock

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6,000

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ComSIT Distribution GmbH

Germany . 4,080 parts In-Stock

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4,080

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Vyrian

USA . 1,646 parts In-Stock

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1,646

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VNN

France . 745 parts In-Stock

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745

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,744 parts In-Stock

1+ parts

$0.169

100+ parts

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1,744

$0.169

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Semicontronic

India . 1,491 parts In-Stock

1+ parts

$0.169

100+ parts

$0.165

1k+ parts

$0.164

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-

1,491

$0.169

$0.165

$0.164

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Corohmni

South Africa . 334 parts In-Stock

1+ parts

$0.199

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334

$0.199

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Corphita

USA . 2,278 parts In-Stock

1+ parts

$0.231

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2,278

$0.231

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Component Stockers USA

USA . 39 parts In-Stock

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$0.260

100+ parts

$0.250

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39

$0.260

$0.250

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.263

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$0.250

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$0.250

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20

$0.263

$0.250

$0.250

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Argo Parts USA

USA . 3,497 parts In-Stock

1+ parts

$0.282

100+ parts

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$0.274

3,497

$0.282

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$0.274

Aztec Data Supply Inc.

USA . 1,000 parts In-Stock

1+ parts

$1.663

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1,000

$1.663

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Perfect Parts

USA . 8,384 parts In-Stock

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8,384

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SupplyDigital Components

Austria . 7,363 parts In-Stock

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7,363

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Problanco Electronics

Mexico . 7,337 parts In-Stock

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7,337

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,132 parts In-Stock

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$0.201

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4,132

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$0.201

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Kulean Microsystems

USA . 3,328 parts In-Stock

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Supply Digital

USA . 2,085 parts In-Stock

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2,085

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TANS Electronics

Latvia . 1,016 parts In-Stock

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1,016

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UHIMA Technologies

Türkiye . 43 parts In-Stock

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43

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Overview

Unleash the power of innovation with the BD682S from Onsemi, a leading manufacturer known for its top-notch quality and reliability. As part of the Power Bipolar Junction Transistors (BJT) category, this PNP transistor offers outstanding performance in switching applications. With a high DC current gain of 750 and a maximum collector current of 4A, this Darlington configuration transistor is designed to handle up to 40W of power dissipation, making it ideal for a wide range of industrial and commercial uses. Experience the value and benefits that the BD682S brings to your projects, providing you with the advantage of superior performance and efficiency. Elevate your designs with Onsemi's BD682S today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for high voltage and current handling capabilities in circuit design.

Configuration: DARLINGTON

Enhances the current gain of the transistor, making it ideal for high-power switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Simplifies the soldering process and provides secure connections.

No. of Terminals: 3

Offers flexibility in circuit design and connection options.

Maximum Power Dissipation (Abs): 40 W

Allows for handling of high power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables convenient mounting and heat dissipation.

Minimum DC Current Gain (hFE): 750

Ensures high amplification capabilities in circuit design.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 100 V

Handles high voltage levels safely, enhancing circuit reliability.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide range of temperatures.

Maximum Collector Current (IC): 4 A

Capable of handling high currents, suitable for power applications.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and corrosion resistance for stable connections.

Terminal Position: SINGLE

Simplifies circuit design and installation process.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD682S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD682S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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