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BD682G

Onsemi

BD682G by Onsemi

The Onsemi BD682G is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 100V, max current of 4A, and min DC current gain of 750. With a package style of flange mount and max power dissipation of 40W, it's suitable for high-power amplification tasks.

Median Price

$1.310

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$0.846

100+ parts

$0.803

1k+ parts

$0.803

10k+ parts

-

5,000

$0.846

$0.803

$0.803

-

Farnell

UK . 70 parts In-Stock

1+ parts

$1.310

100+ parts

$0.552

1k+ parts

$0.424

10k+ parts

$0.416

70

$1.310

$0.552

$0.424

$0.416

Element14

Singapore . 546 parts In-Stock

1+ parts

$1.390

100+ parts

$0.888

1k+ parts

$0.590

10k+ parts

$0.528

546

$1.390

$0.888

$0.590

$0.528

Arrow

USA . 175 parts In-Stock

1+ parts

$1.483

100+ parts

$0.629

1k+ parts

$0.420

10k+ parts

$0.372

175

$1.483

$0.629

$0.420

$0.372

Mouser Electronics

USA . 1,266 parts In-Stock

1+ parts

$1.540

100+ parts

$0.649

1k+ parts

$0.510

10k+ parts

-

1,266

$1.540

$0.649

$0.510

-

DigiKey

USA . 933 parts In-Stock

1+ parts

$1.540

100+ parts

$0.650

1k+ parts

$0.465

10k+ parts

$0.366

933

$1.540

$0.650

$0.465

$0.366

Rochester

USA . 12,575 parts In-Stock

1+ parts

-

100+ parts

$0.498

1k+ parts

$0.413

10k+ parts

$0.368

12,575

-

$0.498

$0.413

$0.368

Verical

USA . 11,860 parts In-Stock

1+ parts

-

100+ parts

-

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$0.516

10k+ parts

$0.460

11,860

-

-

$0.516

$0.460

Chip1Stop

Japan . 1,507 parts In-Stock

1+ parts

-

100+ parts

$0.627

1k+ parts

$0.498

10k+ parts

-

1,507

-

$0.627

$0.498

-

EBV Elektronik

Germany . 500 parts In-Stock

1+ parts

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500

-

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Distrelec

Netherlands . 347 parts In-Stock

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347

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,398 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

-

10k+ parts

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2,398

$0.387

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.412

100+ parts

-

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50

$0.412

-

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Chip Stock

USA . 21,710 parts In-Stock

1+ parts

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21,710

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IBS Electronics

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.533

10k+ parts

$0.512

3,500

-

-

$0.533

$0.512

Vyrian

USA . 2,076 parts In-Stock

1+ parts

-

100+ parts

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2,076

-

-

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NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.682

10k+ parts

-

1,000

-

-

$0.682

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Flip Electronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

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500

-

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J2 Sourcing AB

Sweden . 150 parts In-Stock

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150

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VNN

France . 147 parts In-Stock

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147

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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80

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,149 parts In-Stock

1+ parts

$0.346

100+ parts

-

1k+ parts

-

10k+ parts

-

2,149

$0.346

-

-

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Semicontronic

India . 2,033 parts In-Stock

1+ parts

$0.346

100+ parts

$0.337

1k+ parts

$0.336

10k+ parts

-

2,033

$0.346

$0.337

$0.336

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Corphita

USA . 718 parts In-Stock

1+ parts

$0.366

100+ parts

-

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-

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718

$0.366

-

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Corohmni

South Africa . 57 parts In-Stock

1+ parts

$0.396

100+ parts

-

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57

$0.396

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

$0.388

10k+ parts

-

2,000

$0.404

-

$0.388

-

Argo Parts USA

USA . 2,617 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

$0.400

2,617

$0.412

-

-

$0.400

Continental Prestige Electronics

USA . 343 parts In-Stock

1+ parts

$0.412

100+ parts

-

1k+ parts

-

10k+ parts

$0.404

343

$0.412

-

-

$0.404

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.846

100+ parts

$0.803

1k+ parts

$0.803

10k+ parts

-

5,000

$0.846

$0.803

$0.803

-

Aztec Data Supply Inc.

USA . 3,317 parts In-Stock

1+ parts

$0.993

100+ parts

-

1k+ parts

-

10k+ parts

-

3,317

$0.993

-

-

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Microchip USA

USA . 393 parts In-Stock

1+ parts

$5.980

100+ parts

-

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393

$5.980

-

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GreenTree Electronics

Israel . 25,205 parts In-Stock

1+ parts

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25,205

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RC Electronics

USA . 18,200 parts In-Stock

1+ parts

-

100+ parts

$0.420

1k+ parts

$0.380

10k+ parts

$0.370

18,200

-

$0.420

$0.380

$0.370

Lixinc

USA . 14,649 parts In-Stock

1+ parts

-

100+ parts

-

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14,649

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Perfect Parts

USA . 14,282 parts In-Stock

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14,282

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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SupplyDigital Components

Austria . 6,015 parts In-Stock

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6,015

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A-Z Elektronik GmbH

Germany . 5,703 parts In-Stock

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5,703

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Kulean Microsystems

USA . 4,753 parts In-Stock

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4,753

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Problanco Electronics

Mexico . 4,421 parts In-Stock

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4,421

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Infinite Electronics LLP (Excess)

. 4,102 parts In-Stock

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4,102

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Alle Elektronik GmbH

Germany . 3,802 parts In-Stock

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3,802

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TANS Electronics

Latvia . 2,817 parts In-Stock

1+ parts

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2,817

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Robosynatics

Brazil . 950 parts In-Stock

1+ parts

-

100+ parts

$0.920

1k+ parts

$0.920

10k+ parts

$0.920

950

-

$0.920

$0.920

$0.920

Lucentia Tech

USA . 950 parts In-Stock

1+ parts

-

100+ parts

$0.920

1k+ parts

$0.920

10k+ parts

$0.920

950

-

$0.920

$0.920

$0.920

UHIMA Technologies

Türkiye . 553 parts In-Stock

1+ parts

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553

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Authorized Procurement Solutions

USA . 205 parts In-Stock

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205

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Cyclops Electronics Ltd (Excess)

UK . 80 parts In-Stock

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80

-

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Overview

Unleash the power of innovation with the BD682G by Onsemi, a top-of-the-line Power Bipolar Junction Transistor that sets the standard for performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor boasts a DARLINGTON configuration with a built-in diode and resistor, making it ideal for amplifier applications. With a maximum power dissipation of 40W and a minimum DC current gain of 750, this transistor ensures optimal efficiency and functionality. Upgrade your projects with the BD682G and experience unparalleled quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various electronic applications.

Polarity or Channel Type: PNP

The PNP polarity type allows for easy integration into existing circuits and provides versatile functionality.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space on the PCB.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, this transistor ensures optimal performance in audio and signal processing applications.

Package Shape: RECTANGULAR

The rectangular package shape enables easy mounting and secure placement within electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy soldering onto circuit boards, providing a reliable electrical connection.

No. of Elements: 1

With a single element, this transistor offers simplicity in circuit design and efficient operation.

No. of Terminals: 3

The three terminals provide the necessary connections for seamless integration into electronic circuits.

Maximum Power Dissipation (Abs): 40 W

The high power dissipation capacity of 40W ensures robust performance and reliability in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and secure mounting in electronic devices.

Minimum DC Current Gain (hFE): 750

The high minimum DC current gain of 750 ensures consistent and stable amplification of signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand heat and operate in harsh environments.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage of 100V allows for handling of high voltage levels in the circuit.

Transistor Element Material: SILICON

The use of silicon material in the transistor element ensures reliability, low noise, and high performance in various applications.

Maximum Collector Current (IC): 4 A

The high maximum collector current of 4A enables the transistor to handle large current loads without overheating or failure.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper alignment during soldering.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD682G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD682G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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