Loading...

BD680AS

Onsemi

BD680AS by Onsemi

The Onsemi BD680AS is a PNP Darlington transistor with 80V VCEO, 4A IC, and 40W power dissipation. Ideal for switching applications, it has a min hFE of 750 and operates up to 150°C. The through-hole package with matte tin finish is suitable for various electronic designs.

Median Price

$0.276

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 7,003 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.190

7,003

-

-

-

$0.190

Flip Electronics (Authorized)

USA . 7,003 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,003

-

-

-

-

Rochester

USA . 343 parts In-Stock

1+ parts

-

100+ parts

$0.361

1k+ parts

$0.299

10k+ parts

$0.267

343

-

$0.361

$0.299

$0.267

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,949 parts In-Stock

1+ parts

$0.277

100+ parts

-

1k+ parts

-

10k+ parts

-

1,949

$0.277

-

-

-

Flip Electronics

USA . 7,003 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,003

-

-

-

-

Vyrian

USA . 3,426 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,426

-

-

-

-

VNN

France . 959 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

959

-

-

-

-

ComSIT Distribution GmbH

Germany . 930 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

930

-

-

-

-

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,358 parts In-Stock

1+ parts

$0.230

100+ parts

-

1k+ parts

-

10k+ parts

-

3,358

$0.230

-

-

-

Semicontronic

India . 3,157 parts In-Stock

1+ parts

$0.230

100+ parts

$0.224

1k+ parts

$0.223

10k+ parts

-

3,157

$0.230

$0.224

$0.223

-

Corphita

USA . 2,942 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

10k+ parts

-

2,942

$0.263

-

-

-

Corohmni

South Africa . 190 parts In-Stock

1+ parts

$0.270

100+ parts

-

1k+ parts

-

10k+ parts

-

190

$0.270

-

-

-

Component Stockers USA

USA . 406 parts In-Stock

1+ parts

$0.300

100+ parts

$0.290

1k+ parts

-

10k+ parts

-

406

$0.300

$0.290

-

-

Aztec Data Supply Inc.

USA . 4,323 parts In-Stock

1+ parts

$0.638

100+ parts

-

1k+ parts

-

10k+ parts

-

4,323

$0.638

-

-

-

Metaverse IC Inc.

Canada . 25,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,800

-

-

-

-

Kulean Microsystems

USA . 7,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,738

-

-

-

-

TANS Electronics

Latvia . 6,583 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,583

-

-

-

-

Authorized Procurement Solutions

USA . 5,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,500

-

-

-

-

Problanco Electronics

Mexico . 3,418 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,418

-

-

-

-

Continental Prestige Electronics

USA . 2,932 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,932

-

-

-

-

SupplyDigital Components

Austria . 2,907 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,907

-

-

-

-

Perfect Parts

USA . 2,240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,240

-

-

-

-

Supply Digital

USA . 1,973 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,973

-

-

-

-

Argo Parts USA

USA . 1,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,516

-

-

-

-

UHIMA Technologies

Türkiye . 735 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

735

-

-

-

-

Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Unleash the power of innovation with the BD680AS by Onsemi! Crafted by a trusted manufacturer, this Power Bipolar Junction Transistor is a game-changer in the world of switching applications. Its robust design and state-of-the-art technology ensure reliability and efficiency like never before. With a maximum power dissipation of 40 W and a maximum collector-emitter voltage of 80 V, this PNP Darlington transistor is a must-have for your projects. Elevate your creations with the BD680AS and experience unparalleled performance that surpasses expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for long-term use.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, making it a versatile option for various applications.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and allows for high switching speeds, making this transistor ideal for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient and reliable performance in high-frequency switching circuits.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy installation and ensures a secure fit in your circuit design.

Terminal Form: THROUGH-HOLE

The through-hole terminals offer easy soldering and secure connections, making installation hassle-free and reliable.

No. of Terminals: 3

With 3 terminals, this transistor is easy to incorporate into your circuit design and offers flexibility in wiring configurations.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring reliable performance in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and easy mounting, making this transistor suitable for applications where secure installation is required.

Minimum DC Current Gain (hFE): 750

With a high minimum DC current gain, this transistor offers consistent and reliable amplification, making it a dependable choice for various circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance, ensuring stability in various operating conditions.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows for safe operation at higher voltages, making this transistor suitable for a variety of voltage levels.

Transistor Element Material: SILICON

The silicon material used in the transistor element ensures high performance and reliability, making it a durable choice for long-term use.

Maximum Collector Current (IC): 4 A

With a high maximum collector current, this transistor can handle high current loads with ease, providing reliable performance in demanding applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals offers corrosion resistance and ensures reliable connections, making this transistor suitable for long-term use in various environments.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, making this transistor easy to incorporate into your circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD680AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD680AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20