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BD681S

Onsemi

BD681S by Onsemi

The Onsemi BD681S is a NPN Darlington BJT transistor with max. power dissipation of 40W, hFE of 750, and max. collector current of 4A. Ideal for switching applications in devices requiring high current amplification and voltage control due to its high gain and low saturation voltage capabilities.

Median Price

$0.319

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 50 parts In-Stock

1+ parts

$0.239

100+ parts

$0.227

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$0.227

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50

$0.239

$0.227

$0.227

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Farnell

UK . 1,352 parts In-Stock

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$0.338

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$0.338

DigiKey

USA . 1,052 parts In-Stock

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$0.300

1,052

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$0.300

Rochester

USA . 692 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.296

10k+ parts

$0.264

692

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$0.357

$0.296

$0.264

Distributors (In-Stock)

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Digiode

USA . 2,043 parts In-Stock

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$0.227

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2,043

$0.227

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Nova Conductors

Japan . 89 parts In-Stock

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$0.232

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$0.232

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Chip Stock

USA . 4,720 parts In-Stock

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4,720

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DigiKey Marketplace

USA . 1,300 parts In-Stock

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Vyrian

USA . 1,291 parts In-Stock

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VNN

France . 800 parts In-Stock

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800

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

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Holdelec - ElecDif-Pro

France . 200 parts In-Stock

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200

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ABC Electronics Ltd.

UK . 67 parts In-Stock

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67

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Cyclops Electronics Ltd

UK . 4 parts In-Stock

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4

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 780 parts In-Stock

1+ parts

$0.203

100+ parts

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780

$0.203

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Corphita

USA . 1,568 parts In-Stock

1+ parts

$0.215

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1,568

$0.215

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Corohmni

South Africa . 70 parts In-Stock

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$0.227

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70

$0.227

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Argo Parts USA

USA . 1,055 parts In-Stock

1+ parts

$0.232

100+ parts

-

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$0.225

1,055

$0.232

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-

$0.225

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.232

100+ parts

$0.220

1k+ parts

$0.209

10k+ parts

$0.206

300

$0.232

$0.220

$0.209

$0.206

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.239

100+ parts

$0.227

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$0.227

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50

$0.239

$0.227

$0.227

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Semicontronic

India . 1,238 parts In-Stock

1+ parts

$0.442

100+ parts

$0.431

1k+ parts

$0.429

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1,238

$0.442

$0.431

$0.429

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Aztec Data Supply Inc.

USA . 3,029 parts In-Stock

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$0.463

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3,029

$0.463

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Metaverse IC Inc.

Canada . 45,406 parts In-Stock

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Perfect Parts

USA . 17,920 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,642 parts In-Stock

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Problanco Electronics

Mexico . 7,266 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,614 parts In-Stock

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SupplyDigital Components

Austria . 4,602 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,076 parts In-Stock

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TANS Electronics

Latvia . 2,450 parts In-Stock

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Continental Prestige Electronics

USA . 1,300 parts In-Stock

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$0.242

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$0.242

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Kulean Microsystems

USA . 1,029 parts In-Stock

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1,029

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Supply Digital

USA . 239 parts In-Stock

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239

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UHIMA Technologies

Türkiye . 159 parts In-Stock

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159

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Robosynatics

Brazil . 150 parts In-Stock

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150

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Lucentia Tech

USA . 150 parts In-Stock

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150

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Overview

Experience the power and reliability of the BD681S by Onsemi, a leading manufacturer in the industry. This Power BJT transistor with NPN polarity and Darlington configuration is perfect for switching applications. With a maximum power dissipation of 40W and a minimum DC current gain of 750, this transistor offers exceptional performance. Its high-quality construction and durability make it a valuable asset for any project. Upgrade your devices with the BD681S and enjoy seamless operation and efficient power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high mechanical strength and insulation, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: DARLINGTON

Darlington configuration offers high current gain and allows for high power switching applications.

Transistor Application: SWITCHING

Designed specifically for high-speed switching applications, ensuring efficient performance in such tasks.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle demanding power requirements.

Maximum Collector-Emitter Voltage: 100 V

The high maximum voltage rating allows for use in a wide range of applications.

Maximum Collector Current (IC): 4 A

Capable of handling high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 10 MHz

With a high transition frequency, this transistor can operate at high frequencies, suitable for fast switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD681S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD681S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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