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MJL4302A

Onsemi

MJL4302A by Onsemi

The Onsemi MJL4302A is a PNP BJT transistor with 230W power dissipation, 350V max. collector-emitter voltage, and 15A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$6.599

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Freelance Electronics

USA . 34 parts In-Stock

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$5.218

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$5.479

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$5.166

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$5.218

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Bristol Electronics

USA . 50 parts In-Stock

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$7.980

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$3.751

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50

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Chip Stock

USA . 7,608 parts In-Stock

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Vyrian

USA . 6,871 parts In-Stock

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Digiode

USA . 1,694 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 125 parts In-Stock

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Nova Conductors

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Microfarads

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Corohmni

South Africa . 105 parts In-Stock

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$5.218

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AZTECH Wire

Italy . 285 parts In-Stock

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$10.846

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Ampacity Inc.

Singapore . 271 parts In-Stock

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$52.050

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Continental Prestige Electronics

USA . 6,544 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 3,623 parts In-Stock

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SupplyDigital Components

Austria . 2,336 parts In-Stock

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Corphita

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Kulean Microsystems

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Argo Parts USA

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Lixinc

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UHIMA Technologies

Türkiye . 316 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi MJL4302A Power Bipolar Junction Transistor (BJT). Manufactured by Onsemi, a renowned leader in semiconductor technology, this PNP transistor offers high-quality performance ideal for amplifier applications. With a maximum power dissipation of 230W and a maximum collector-emitter voltage of 350V, this transistor delivers unparalleled reliability and efficiency. Experience the value and benefits of superior design and engineering with the MJL4302A, providing customers with a cutting-edge solution for all their electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: PNP

The PNP polarity allows for versatile use in amplifier applications, making it suitable for a wide range of electronic projects.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it easier to incorporate this transistor into electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor ensures high-quality signal amplification and performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in electronic circuits, saving space and simplifying design.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and reliable performance in various electronic applications.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and compatibility with a wide range of electronic components.

Maximum Power Dissipation (Abs): 230 W

The high power dissipation capability of 230W allows for handling of large power loads, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stable mounting and heat dissipation, ensuring reliable performance in demanding environments.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures consistent and reliable amplification of signals in electronic circuits.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C allows for reliable performance in high-temperature environments, ensuring stability and longevity.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage of 350V allows for handling of high voltage loads, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

The silicon element material provides excellent performance and reliability for the transistor, ensuring consistent operation over time.

Maximum Collector Current (IC): 15 A

The high maximum collector current of 15A allows for handling of large current loads, making it suitable for high-power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides reliable solder connections, ensuring secure and durable connections in electronic circuits.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures easy connection to external components, making it user-friendly for electronic projects.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235°C ensures secure solder connections and reliable performance during the manufacturing process.

Nominal Transition Frequency (fT): 35 MHz

The high nominal transition frequency of 35MHz allows for fast switching and signal amplification, ensuring high-performance operation in electronic circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL4302A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL4302A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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