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MJL4281AG

Onsemi

MJL4281AG by Onsemi

The Onsemi MJL4281AG is a NPN BJT transistor with 230W power dissipation, 350V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150°C. The package style is flange mount with matte tin terminal finish in a rectangular shape.

Median Price

$6.630

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 35 parts In-Stock

1+ parts

$6.630

100+ parts

$3.450

1k+ parts

$3.350

10k+ parts

$2.940

35

$6.630

$3.450

$3.350

$2.940

Farnell

UK . 363 parts In-Stock

1+ parts

$6.991

100+ parts

$4.565

1k+ parts

$3.398

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363

$6.991

$4.565

$3.398

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Newark

USA . 50 parts In-Stock

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$7.650

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$7.650

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DigiKey

USA . 182 parts In-Stock

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$8.130

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$4.061

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$3.500

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182

$8.130

$4.061

$3.500

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Mouser Electronics

USA . 40 parts In-Stock

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$8.130

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40

$8.130

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Arrow

USA . 400 parts In-Stock

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$3.152

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$3.152

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Verical

USA . 400 parts In-Stock

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$3.161

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400

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$3.161

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Master Electronics

USA . 300 parts In-Stock

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-

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$4.010

1k+ parts

$3.400

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$3.370

300

-

$4.010

$3.400

$3.370

EBV Elektronik

Germany . 200 parts In-Stock

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Avnet

USA . 150 parts In-Stock

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RS (Exports)

UK . 75 parts In-Stock

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$4.890

1k+ parts

$4.053

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75

-

$4.890

$4.053

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 75 parts In-Stock

1+ parts

$4.620

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75

$4.620

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IBS Electronics

USA . 625 parts In-Stock

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$4.895

100+ parts

$4.628

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625

$4.895

$4.628

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Digiode

USA . 1,424 parts In-Stock

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$6.170

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1,424

$6.170

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TME

Poland . 127 parts In-Stock

1+ parts

$6.910

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$4.200

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127

$6.910

$4.200

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Flip Electronics

USA . 4,875 parts In-Stock

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4,875

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Dan-Mar Components

USA . 298 parts In-Stock

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NAC Semi

USA . 150 parts In-Stock

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$17.550

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$15.950

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$17.550

$15.950

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Chip Stock

USA . 144 parts In-Stock

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144

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Vyrian

USA . 105 parts In-Stock

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105

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ACDS - Activité Composants Distribution Service

France . 75 parts In-Stock

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75

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Inventory MP

USA . 22 parts In-Stock

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22

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Bristol Electronics

USA . 22 parts In-Stock

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22

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Distributors (Availability)

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.900

100+ parts

$0.819

1k+ parts

$0.738

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70

$0.900

$0.819

$0.738

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Aztec Data Supply Inc.

USA . 3,672 parts In-Stock

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$1.000

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3,672

$1.000

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Semicontronic

India . 422 parts In-Stock

1+ parts

$2.900

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$2.828

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$2.813

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422

$2.900

$2.828

$2.813

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Ampacity Inc.

Singapore . 143 parts In-Stock

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$2.900

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143

$2.900

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Corohmni

South Africa . 307 parts In-Stock

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$3.320

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307

$3.320

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Aranea Global

USA . 500 parts In-Stock

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$4.528

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$4.346

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500

$4.528

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$4.346

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Continental Prestige Electronics

USA . 5,248 parts In-Stock

1+ parts

$4.605

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$4.513

5,248

$4.605

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$4.513

Corphita

USA . 471 parts In-Stock

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$5.846

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471

$5.846

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Microchip USA

USA . 7,845 parts In-Stock

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$17.780

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$17.780

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TANS Electronics

Latvia . 8,232 parts In-Stock

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Kulean Microsystems

USA . 6,496 parts In-Stock

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Lixinc

USA . 5,544 parts In-Stock

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Argo Parts USA

USA . 4,886 parts In-Stock

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4,886

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Problanco Electronics

Mexico . 2,262 parts In-Stock

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2,262

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SupplyDigital Components

Austria . 1,793 parts In-Stock

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1,793

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Authorized Procurement Solutions

USA . 1,575 parts In-Stock

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1,575

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Eastek

USA . 975 parts In-Stock

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975

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Kepictronics

USA . 539 parts In-Stock

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539

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UHIMA Technologies

Türkiye . 389 parts In-Stock

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389

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Robosynatics

Brazil . 300 parts In-Stock

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300

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Lucentia Tech

USA . 300 parts In-Stock

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iodParts Technologies Inc.

India . 75 parts In-Stock

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GreenTree Electronics

Israel . 75 parts In-Stock

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Overview

Upgrade your amplifier with the MJL4281AG Power Bipolar Junction Transistor from Onsemi. With a maximum power dissipation of 230W and a maximum collector-emitter voltage of 350V, this NPN transistor offers high performance and reliability. Ideal for a wide range of applications, including audio amplification, the MJL4281AG provides smooth and clear sound quality. Trust in Onsemi's reputation for producing top-quality components to ensure that your project runs smoothly and efficiently. Experience the value and benefits of using the MJL4281AG in your next amplifier design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into electronic circuits, making this transistor versatile and compatible with many systems.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces complexity, making this transistor easy to use for amplification purposes.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and reliability in amplifying signals.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact footprint, allowing for efficient use of space in electronic assemblies.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and ease of soldering during circuit assembly.

No. of Terminals: 3

With three terminals, this transistor offers straightforward connection options for circuit integration, simplifying the design process.

Maximum Power Dissipation (Abs): 230 W

The high maximum power dissipation rating of 230 W allows for the handling of high power loads, making this transistor suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and heat dissipation, enhancing the reliability and performance of this transistor.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures consistent and reliable amplification, making this transistor ideal for signal amplification tasks.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring reliable performance in various environments.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating of 350 V allows for versatile use in different voltage applications, expanding the transistor's range of possible uses.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers high performance, reliability, and efficiency, making this transistor a dependable choice for electronic circuits.

Maximum Collector Current (IC): 15 A

The high maximum collector current rating of 15 A enables this transistor to handle high current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a durable and reliable connection, ensuring long-term performance and stability in circuit applications.

Terminal Position: SINGLE

The single terminal position simplifies the connection process and ensures easy integration into circuit designs, making this transistor user-friendly.

Nominal Transition Frequency (fT): 35 MHz

With a nominal transition frequency of 35 MHz, this transistor offers fast response times and high-frequency operation, making it ideal for high-speed amplification tasks.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJL4281AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJL4281AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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