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BD437T

Onsemi

BD437T by Onsemi

The Onsemi BD437T is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min DC current gain of 40, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 8,221 parts In-Stock

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Digiode

USA . 1,304 parts In-Stock

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1,304

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AZTECH Wire

Italy . 476 parts In-Stock

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$19.070

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476

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SupplyDigital Components

Austria . 6,110 parts In-Stock

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Kulean Microsystems

USA . 4,680 parts In-Stock

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4,680

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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TANS Electronics

Latvia . 2,004 parts In-Stock

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Northwest PG Solutions

USA . 1,146 parts In-Stock

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UHIMA Technologies

Türkiye . 863 parts In-Stock

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Native Components

USA . 508 parts In-Stock

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Corphita

USA . 429 parts In-Stock

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Corohmni

South Africa . 350 parts In-Stock

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350

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Problanco Electronics

Mexico . 118 parts In-Stock

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Overview

Discover the power of the Onsemi BD437T Power Bipolar Junction Transistor (BJT) - a reliable and high-quality component designed for switching applications. With its NPN configuration and maximum collector current of 4A, this transistor offers superior performance and efficiency. Perfect for a wide range of electronic devices, the BD437T is housed in a durable plastic/epoxy package with through-hole terminals for easy installation. Trust in Onsemi's expertise and innovation to deliver top-notch products that exceed expectations. Unlock the potential of your projects with the BD437T and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and insulation for safe operation.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits.

Configuration: SINGLE

Simplifies circuit design and installation.

Transistor Application: SWITCHING

Designed for efficient switching applications.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement in circuits.

No. of Terminals: 3

Simplified connection and circuit design.

Maximum Power Dissipation (Abs): 36 W

Supports high-power applications.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation.

Minimum DC Current Gain (hFE): 40

Ensures stable and reliable transistor operation.

Maximum Operating Temperature: 150 °C

Suitable for operation in a range of environments.

Maximum Collector-Emitter Voltage: 45 V

Ideal for low to medium voltage applications.

Transistor Element Material: SILICON

Provides high efficiency and reliability.

Maximum Collector Current (IC): 4 A

Suitable for medium-current applications.

Terminal Finish: TIN LEAD

Ensures good conductivity and soldering.

Terminal Position: SINGLE

Simplifies connection in circuits.

Peak Reflow Temperature °C: 235

Supports high-temperature soldering processes.

Nominal Transition Frequency (fT): 3 MHz

Provides fast switching performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD437T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD437T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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