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BD435G

Onsemi

BD435G by Onsemi

The Onsemi BD435G is a NPN Power BJT with 36W power dissipation, ideal for switching applications. Featuring a max collector-emitter voltage of 32V and max collector current of 4A, it operates up to 150°C. With a min hFE of 50 and fT of 3MHz, this transistor is suitable for various electronic circuits.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 659 parts In-Stock

1+ parts

$0.450

100+ parts

$0.379

1k+ parts

$0.356

10k+ parts

-

659

$0.450

$0.379

$0.356

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Chip1Stop

Japan . 1,873 parts In-Stock

1+ parts

-

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1,873

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Verical

USA . 659 parts In-Stock

1+ parts

-

100+ parts

$0.380

1k+ parts

$0.357

10k+ parts

-

659

-

$0.380

$0.357

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Rochester

USA . 35 parts In-Stock

1+ parts

-

100+ parts

$0.251

1k+ parts

$0.209

10k+ parts

$0.186

35

-

$0.251

$0.209

$0.186

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,129 parts In-Stock

1+ parts

$0.267

100+ parts

-

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2,129

$0.267

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-

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.316

100+ parts

-

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300

$0.316

-

-

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DigiKey Marketplace

USA . 11,102 parts In-Stock

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11,102

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Vyrian

USA . 7,363 parts In-Stock

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-

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7,363

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Flip Electronics

USA . 500 parts In-Stock

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500

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VNN

France . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,382 parts In-Stock

1+ parts

$0.239

100+ parts

-

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2,382

$0.239

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Corphita

USA . 1,510 parts In-Stock

1+ parts

$0.253

100+ parts

-

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1,510

$0.253

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Corohmni

South Africa . 51 parts In-Stock

1+ parts

$0.281

100+ parts

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51

$0.281

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Argo Parts USA

USA . 816 parts In-Stock

1+ parts

$0.316

100+ parts

-

1k+ parts

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10k+ parts

$0.307

816

$0.316

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-

$0.307

Aztec Data Supply Inc.

USA . 1,688 parts In-Stock

1+ parts

$0.406

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1,688

$0.406

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AZTECH Wire

Italy . 203 parts In-Stock

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$12.000

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203

$12.000

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Continental Prestige Electronics

USA . 11,102 parts In-Stock

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$0.304

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11,102

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$0.304

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Problanco Electronics

Mexico . 7,803 parts In-Stock

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7,803

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SupplyDigital Components

Austria . 4,092 parts In-Stock

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4,092

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Perfect Parts

USA . 1,663 parts In-Stock

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1,663

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TANS Electronics

Latvia . 1,512 parts In-Stock

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1,512

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Kulean Microsystems

USA . 378 parts In-Stock

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378

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UHIMA Technologies

Türkiye . 44 parts In-Stock

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44

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Overview

Unlock the power of innovation with the Onsemi BD435G Power Bipolar Junction Transistor. Manufactured by Onsemi, a trusted leader in the industry, this NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 32V and a maximum collector current of 4A. With a minimum DC current gain of 50 and a maximum power dissipation of 36W, the BD435G delivers high performance in a compact, easy-to-install package. Whether you're designing industrial machinery or consumer electronics, this transistor provides reliability and efficiency for all your projects. Elevate your designs with the Onsemi BD435G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the transistor lightweight and durable, which is ideal for various electronic applications.

Polarity or Channel Type: NPN

The NPN polarity or channel type is commonly used for switching applications, which makes this transistor suitable for switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers high efficiency and fast switching speeds, making it a reliable choice for switching circuits.

Maximum Power Dissipation (Abs): 36 W

With a maximum power dissipation of 36 W, this transistor can handle high power levels, making it suitable for applications that require high power output.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C ensures the transistor can operate reliably under various temperature conditions, making it suitable for a wide range of environments.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency of 3 MHz indicates that this transistor can switch at high speeds, making it ideal for applications that require fast switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD435G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD435G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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