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BD438G

Onsemi

BD438G by Onsemi

The Onsemi BD438G is a PNP BJT transistor with 3 terminals, capable of handling up to 4A collector current and 36W power dissipation. It operates b/w -55°C to 150°C, making it suitable for switching applications due to its high transition frequency of 3MHz.

Median Price

$1.640

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 3 parts In-Stock

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$1.640

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$1.640

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Rochester

USA . 19 parts In-Stock

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$0.396

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$0.329

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$0.293

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$0.293

DigiKey

USA . 19 parts In-Stock

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$15.790

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19

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$15.790

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Nova Conductors

Japan . 42 parts In-Stock

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$0.258

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Digiode

USA . 2,031 parts In-Stock

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$0.309

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Vyrian

USA . 7,974 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,465 parts In-Stock

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VNN

France . 3,634 parts In-Stock

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DigiKey Marketplace

USA . 1,269 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 455 parts In-Stock

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455

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Ashlea Components Ltd

UK . 163 parts In-Stock

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Martec Srl

Italy . 149 parts In-Stock

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Ampacity Inc.

Singapore . 14 parts In-Stock

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$0.276

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14

$0.276

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Semicontronic

India . 14 parts In-Stock

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$0.276

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$0.269

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$0.268

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14

$0.276

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$0.268

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Corphita

USA . 1,727 parts In-Stock

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$0.292

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Corohmni

South Africa . 136 parts In-Stock

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$0.325

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$0.325

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Aztec Data Supply Inc.

USA . 2,918 parts In-Stock

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$0.806

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2,918

$0.806

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AZTECH Wire

Italy . 320 parts In-Stock

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$9.508

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Problanco Electronics

Mexico . 7,556 parts In-Stock

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Kulean Microsystems

USA . 5,045 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 3,868 parts In-Stock

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Perfect Parts

USA . 3,070 parts In-Stock

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Assy Fe

Spain . 1,350 parts In-Stock

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Continental Prestige Electronics

USA . 1,269 parts In-Stock

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$0.294

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Argo Parts USA

USA . 924 parts In-Stock

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UHIMA Technologies

Türkiye . 537 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 455 parts In-Stock

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RC Electronics

USA . 368 parts In-Stock

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$0.270

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$0.260

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$0.250

368

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TANS Electronics

Latvia . 166 parts In-Stock

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GreenTree Electronics

Israel . 3 parts In-Stock

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Overview

Enhance your power management systems with the high-quality BD438G by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch reliability and performance. This PNP Power BJT transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 45V and a maximum collector current of 4A. With a minimum DC current gain of 40 and a transition frequency of 3MHz, this transistor provides efficient power dissipation of 36W. Upgrade your electronic projects with the BD438G and experience enhanced functionality and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, increasing its longevity.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and easier integration into existing systems.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such tasks.

Package Shape: RECTANGULAR

Compact design and easy to mount in various electronic devices.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection in circuit boards.

Maximum Power Dissipation (Abs): 36 W

Can handle higher power dissipation, making it suitable for applications requiring higher power levels.

Package Style (Meter): FLANGE MOUNT

Allows for stable mounting and heat dissipation in the system.

Minimum DC Current Gain (hFE): 40

Ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for harsh environments.

Maximum Collector-Emitter Voltage: 45 V

Can withstand higher voltage levels, increasing its versatility in different circuit configurations.

Transistor Element Material: SILICON

Provides high performance and reliability due to the inherent properties of silicon material.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature environments, suitable for a wide range of applications.

Maximum Collector Current (IC): 4 A

Can handle higher current levels, making it suitable for applications requiring higher current flow.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and prevents corrosion of terminals.

Terminal Position: SINGLE

Simplified connection and integration into circuits.

Nominal Transition Frequency (fT): 3 MHz

High frequency capability for fast switching applications, ensuring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD438G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD438G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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