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BD437G

Onsemi

BD437G by Onsemi

The Onsemi BD437G is a NPN BJT transistor with 45V VCE, 4A IC, and 36W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.

Median Price

$1.280

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 88 parts In-Stock

1+ parts

$0.264

100+ parts

$0.253

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88

$0.264

$0.253

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Farnell

UK . 640 parts In-Stock

1+ parts

$0.505

100+ parts

$0.253

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$0.196

10k+ parts

$0.167

640

$0.505

$0.253

$0.196

$0.167

Distrelec

Netherlands . 408 parts In-Stock

1+ parts

$1.081

100+ parts

$0.655

1k+ parts

$0.546

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408

$1.081

$0.655

$0.546

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Mouser Electronics

USA . 440 parts In-Stock

1+ parts

$1.480

100+ parts

$0.624

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$0.408

10k+ parts

$0.398

440

$1.480

$0.624

$0.408

$0.398

DigiKey

USA . 9 parts In-Stock

1+ parts

$1.480

100+ parts

$0.624

1k+ parts

$0.445

10k+ parts

$0.348

9

$1.480

$0.624

$0.445

$0.348

Chip1Stop

Japan . 1 parts In-Stock

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$3.410

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1

$3.410

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RS (Exports)

UK . 5,080 parts In-Stock

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$3.839

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5,080

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$3.839

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Verical

USA . 1,500 parts In-Stock

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$0.350

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Flip Electronics (Authorized)

USA . 415 parts In-Stock

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415

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Digiode

USA . 2,149 parts In-Stock

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$0.249

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$0.249

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Nova Conductors

Japan . 50 parts In-Stock

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$0.436

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50

$0.436

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Vyrian

USA . 6,608 parts In-Stock

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6,608

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NAC Semi

USA . 1,000 parts In-Stock

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$1.640

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1,000

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$1.640

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ComSIT Distribution GmbH

Germany . 950 parts In-Stock

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950

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Flip Electronics

USA . 415 parts In-Stock

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415

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Pegasus Components GmbH

Germany . 328 parts In-Stock

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328

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VNN

France . 222 parts In-Stock

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222

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,342 parts In-Stock

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$0.181

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3,342

$0.181

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Semicontronic

India . 2,950 parts In-Stock

1+ parts

$0.181

100+ parts

$0.176

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$0.176

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2,950

$0.181

$0.176

$0.176

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Corohmni

South Africa . 434 parts In-Stock

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$0.213

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434

$0.213

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Corphita

USA . 733 parts In-Stock

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$0.236

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733

$0.236

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Argo Parts USA

USA . 2,188 parts In-Stock

1+ parts

$0.436

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$0.423

2,188

$0.436

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$0.423

Netroflash

USA . 1,000 parts In-Stock

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$0.436

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1,000

$0.436

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Continental Prestige Electronics

USA . 3,780 parts In-Stock

1+ parts

$0.842

100+ parts

$0.518

1k+ parts

$0.337

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$0.288

3,780

$0.842

$0.518

$0.337

$0.288

Aztec Data Supply Inc.

USA . 4,247 parts In-Stock

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$1.555

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$1.555

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Lixinc

USA . 15,160 parts In-Stock

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Perfect Parts

USA . 13,150 parts In-Stock

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Problanco Electronics

Mexico . 7,129 parts In-Stock

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TANS Electronics

Latvia . 6,972 parts In-Stock

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SupplyDigital Components

Austria . 6,438 parts In-Stock

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Kulean Microsystems

USA . 4,471 parts In-Stock

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Kepictronics

USA . 4,455 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Eastek

USA . 1,500 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 983 parts In-Stock

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983

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GreenTree Electronics

Israel . 500 parts In-Stock

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500

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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Overview

Enhance your power management systems with the BD437G by Onsemi, a high-quality Power BJT transistor designed to optimize switching applications. Manufactured by Onsemi, a trusted industry leader, this NPN transistor offers a maximum collector current of 4A and a power dissipation of 36W, ensuring reliable performance in a variety of environments. Its versatile design, with a single configuration and through-hole terminals, makes it ideal for a wide range of power management tasks. Upgrade your systems today with the BD437G and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in general purpose amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE

Simplified design and ease of use in applications that only require a single transistor.

Transistor Application: SWITCHING

Suitable for switching applications due to its efficient operation in turning circuits on and off.

Maximum Power Dissipation (Abs): 36 W

Can handle high power dissipation, making it suitable for applications that require power handling capabilities.

Package Shape: RECTANGULAR

Space-saving design that allows for easy integration into circuit layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards for reliable connections.

No. of Terminals: 3

Simple connectivity with a limited number of terminals, reducing complexity in circuit design.

Maximum Collector-Emitter Voltage: 45 V

Can withstand high voltages, enhancing the versatility of applications it can be used in.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds in applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD437G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD437G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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