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BD439G

Onsemi

BD439G by Onsemi

The Onsemi BD439G is a NPN BJT transistor with 60V VCEO, 4A IC, and 36W Ptot. Ideal for switching applications due to its high hFE of 25 and fT of 3MHz. Packaged in PLASTIC/EPOXY, it has a FLANGE MOUNT style for through-hole mounting.

Median Price

$1.345

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 660 parts In-Stock

1+ parts

$0.555

100+ parts

$0.448

1k+ parts

$0.387

10k+ parts

-

660

$0.555

$0.448

$0.387

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Chip1Stop

Japan . 1,418 parts In-Stock

1+ parts

$1.093

100+ parts

$0.644

1k+ parts

$0.425

10k+ parts

-

1,418

$1.093

$0.644

$0.425

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Farnell

UK . 2,425 parts In-Stock

1+ parts

$1.170

100+ parts

$0.539

1k+ parts

$0.426

10k+ parts

$0.418

2,425

$1.170

$0.539

$0.426

$0.418

Newark

USA . 785 parts In-Stock

1+ parts

$1.520

100+ parts

$0.788

1k+ parts

$0.682

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785

$1.520

$0.788

$0.682

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DigiKey

USA . 682 parts In-Stock

1+ parts

$1.570

100+ parts

$0.662

1k+ parts

$0.474

10k+ parts

$0.375

682

$1.570

$0.662

$0.474

$0.375

Mouser Electronics

USA . 561 parts In-Stock

1+ parts

$1.570

100+ parts

$0.662

1k+ parts

$0.436

10k+ parts

$0.429

561

$1.570

$0.662

$0.436

$0.429

Element14

Singapore . 2,425 parts In-Stock

1+ parts

$1.980

100+ parts

$0.906

1k+ parts

$0.717

10k+ parts

$0.702

2,425

$1.980

$0.906

$0.717

$0.702

Verical

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.378

10k+ parts

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7,500

-

-

$0.378

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.465

100+ parts

-

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-

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10

$0.465

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-

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Digiode

USA . 1,000 parts In-Stock

1+ parts

$0.667

100+ parts

-

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1,000

$0.667

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Flip Electronics

USA . 7,500 parts In-Stock

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7,500

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VNN

France . 5,725 parts In-Stock

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5,725

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Schukat

Germany . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.800

1k+ parts

$0.477

10k+ parts

-

2,000

-

$0.800

$0.477

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IBS Electronics

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.519

10k+ parts

$0.533

1,500

-

-

$0.519

$0.533

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

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$0.736

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1,000

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-

$0.736

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Vyrian

USA . 933 parts In-Stock

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933

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Distributors (Availability)

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Corohmni

South Africa . 194 parts In-Stock

1+ parts

$0.378

100+ parts

-

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194

$0.378

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Semicontronic

India . 835 parts In-Stock

1+ parts

$0.415

100+ parts

$0.405

1k+ parts

$0.403

10k+ parts

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835

$0.415

$0.405

$0.403

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Ampacity Inc.

Singapore . 600 parts In-Stock

1+ parts

$0.415

100+ parts

-

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600

$0.415

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.456

100+ parts

-

1k+ parts

$0.437

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500

$0.456

-

$0.437

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Argo Parts USA

USA . 3,975 parts In-Stock

1+ parts

$0.465

100+ parts

-

1k+ parts

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10k+ parts

$0.451

3,975

$0.465

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-

$0.451

Corphita

USA . 129 parts In-Stock

1+ parts

$0.632

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129

$0.632

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Continental Prestige Electronics

USA . 1,390 parts In-Stock

1+ parts

$0.722

100+ parts

$0.509

1k+ parts

$0.330

10k+ parts

$0.283

1,390

$0.722

$0.509

$0.330

$0.283

Aztec Data Supply Inc.

USA . 2,045 parts In-Stock

1+ parts

$1.330

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2,045

$1.330

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Lixinc

USA . 16,085 parts In-Stock

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16,085

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SupplyDigital Components

Austria . 7,504 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,211 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,807 parts In-Stock

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4,807

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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TANS Electronics

Latvia . 3,756 parts In-Stock

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3,756

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Perfect Parts

USA . 3,653 parts In-Stock

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3,653

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Kulean Microsystems

USA . 1,810 parts In-Stock

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1,810

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Problanco Electronics

Mexico . 1,260 parts In-Stock

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1,260

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Computer Components Inc. - USA

USA . 396 parts In-Stock

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396

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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35

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Overview

Upgrade your power control systems with the Onsemi BD439G Power Bipolar Junction Transistor. With a maximum power dissipation of 36W and a collector current of 4A, this NPN transistor is perfect for switching applications. The quality and reliability of Onsemi as a manufacturer ensure that you are getting a product that delivers exceptional performance. Whether you're looking to enhance your industrial equipment or optimize your automotive systems, the BD439G provides the value, efficiency, and durability you need. Experience the benefits of high-quality components with the Onsemi BD439G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation, making the transistor safer to use in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easier placement and mounting in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering in circuit boards.

No. of Terminals: 3

Three terminals provide the necessary connections for basic transistor operation.

Maximum Power Dissipation (Abs): 36 W

High power dissipation capability allows the transistor to handle larger currents without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style enables easy installation and secure attachment to heat sinks for improved thermal performance.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the transistor can withstand harsh environmental conditions and high temperatures.

Maximum Collector-Emitter Voltage: 60 V

A maximum collector-emitter voltage of 60V allows the transistor to handle higher voltages in circuit applications.

Transistor Element Material: SILICON

Silicon material provides good conductivity and reliability, making the transistor suitable for various electronic applications.

Maximum Collector Current (IC): 4 A

High maximum collector current rating of 4A allows the transistor to handle large currents in circuit operations.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides a good soldering surface and improves overall connectivity in circuits.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and makes the transistor easy to integrate into circuit designs.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency of 3MHz enables fast switching speeds in applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD439G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD439G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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