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MJE15035

Onsemi

MJE15035 by Onsemi

MJE15035 by Onsemi is a PNP BJT transistor with 50W power dissipation, 350V max. collector-emitter voltage, and 4A max. collector current. Ideal for amplifier applications, it has a min hFE of 10 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$2.400

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 747 parts In-Stock

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$2.400

100+ parts

$2.520

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$2.376

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747

$2.400

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Chip Stock

USA . 14,665 parts In-Stock

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Vyrian

USA . 6,387 parts In-Stock

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Digiode

USA . 2,420 parts In-Stock

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2,420

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Corohmni

South Africa . 153 parts In-Stock

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$2.400

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153

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AZTECH Wire

Italy . 686 parts In-Stock

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$10.620

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686

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Kulean Microsystems

USA . 5,745 parts In-Stock

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Problanco Electronics

Mexico . 5,696 parts In-Stock

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TANS Electronics

Latvia . 2,330 parts In-Stock

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SupplyDigital Components

Austria . 1,852 parts In-Stock

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UHIMA Technologies

Türkiye . 782 parts In-Stock

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Corphita

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Overview

Elevate your amplification projects with the MJE15035 from Onsemi, a leading manufacturer in the industry. This Power Bipolar Junction Transistor offers superior quality and performance, providing customers with reliable and efficient solutions for their amplifier applications. With a maximum collector-emitter voltage of 350V and a maximum power dissipation of 50W, this PNP transistor is designed to deliver exceptional results. Trust in Onsemi's expertise and choose the MJE15035 for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation, this transistor can handle significant power loads, making it reliable for various high-power applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures that the transistor can operate effectively in a range of temperature conditions, increasing its versatility.

Maximum Collector-Emitter Voltage: 350 V

This high voltage rating allows the transistor to handle higher voltages, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 30 MHz

The high transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency applications such as amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE15035 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE15035 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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