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NCV1413BDR2

Onsemi

NCV1413BDR2 by Onsemi

NCV1413BDR2 by Onsemi is a NPN BJT transistor for switching applications. It has a min hFE of 1000, max VCE of 50V, and max IC of 0.5A. This surface-mount transistor comes in a small outline package with 16 terminals and Gull Wing form factor, ideal for compact electronic designs.

Median Price

$0.250

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 8,500 parts In-Stock

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$0.250

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8,500

$0.250

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DF Sales Co.

USA . 8,500 parts In-Stock

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$0.250

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8,500

$0.250

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Bristol Electronics

USA . 682 parts In-Stock

1+ parts

$0.450

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$0.167

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$0.126

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682

$0.450

$0.167

$0.126

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Flip Electronics

USA . 600,000 parts In-Stock

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Chip Stock

USA . 63,750 parts In-Stock

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63,750

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Vyrian

USA . 9,858 parts In-Stock

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9,858

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PC Components Company LLC

USA . 1,532 parts In-Stock

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1,532

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Zilex Electronics Inc.

Canada . 840 parts In-Stock

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840

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Digiode

USA . 734 parts In-Stock

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734

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Microfarads

USA . 644 parts In-Stock

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644

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 327 parts In-Stock

1+ parts

$0.250

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327

$0.250

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AZTECH Wire

Italy . 1,200 parts In-Stock

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$17.070

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1,200

$17.070

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Kulean Microsystems

USA . 6,672 parts In-Stock

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TANS Electronics

Latvia . 3,399 parts In-Stock

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Problanco Electronics

Mexico . 1,079 parts In-Stock

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Corphita

USA . 840 parts In-Stock

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840

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SupplyDigital Components

Austria . 809 parts In-Stock

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809

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Microchip USA

USA . 320 parts In-Stock

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320

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UHIMA Technologies

Türkiye . 169 parts In-Stock

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169

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Overview

Discover the power of the NCV1413BDR2 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its NPN polarity and complex configuration, this transistor offers superior performance and reliability. Ideal for a wide range of electronic devices, this transistor provides customers with unmatched value and benefits. Trust in Onsemi's reputation for excellence and innovation, and experience the advantages that the NCV1413BDR2 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile and widely applicable.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable performance in controlling power flow.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, saving time and effort during assembly.

Minimum DC Current Gain (hFE): 1000

With a high DC current gain, this transistor provides excellent amplification capabilities, enhancing its performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage of 50V, this transistor can handle a wide range of voltage levels, making it versatile for various applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5A of collector current, this transistor is suitable for moderate power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NCV1413BDR2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NCV1413BDR2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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