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BD436T

Onsemi

BD436T by Onsemi

The Onsemi BD436T is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 36W and max collector current of 4A. With a min hFE of 50 and fT of 3MHz, it operates at up to 150 °C, making it suitable for high-power electronic circuits.

Median Price

$0.211

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 75 parts In-Stock

1+ parts

-

100+ parts

$0.211

1k+ parts

$0.175

10k+ parts

$0.156

75

-

$0.211

$0.175

$0.156

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,859 parts In-Stock

1+ parts

$0.164

100+ parts

-

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-

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1,859

$0.164

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Vyrian

USA . 7,221 parts In-Stock

1+ parts

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7,221

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 701 parts In-Stock

1+ parts

$0.156

100+ parts

-

1k+ parts

-

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-

701

$0.156

-

-

-

Corohmni

South Africa . 129 parts In-Stock

1+ parts

$1.493

100+ parts

-

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129

$1.493

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Northwest PG Solutions

USA . 2,349 parts In-Stock

1+ parts

$3.029

100+ parts

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2,349

$3.029

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AZTECH Wire

Italy . 623 parts In-Stock

1+ parts

$21.390

100+ parts

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623

$21.390

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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SupplyDigital Components

Austria . 6,170 parts In-Stock

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6,170

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A-Z Elektronik GmbH

Germany . 5,646 parts In-Stock

1+ parts

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5,646

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Alle Elektronik GmbH

Germany . 3,764 parts In-Stock

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3,764

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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TANS Electronics

Latvia . 2,783 parts In-Stock

1+ parts

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2,783

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Problanco Electronics

Mexico . 2,300 parts In-Stock

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2,300

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UHIMA Technologies

Türkiye . 963 parts In-Stock

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Kulean Microsystems

USA . 787 parts In-Stock

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787

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Native Components

USA . 23 parts In-Stock

1+ parts

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1k+ parts

$2.671

10k+ parts

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23

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$2.671

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Overview

Unleash the power of innovation with the BD436T from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) that are perfect for a wide range of applications including switching. The BD436T offers unparalleled value and benefits to customers, providing reliable performance and efficiency. Trust Onsemi to deliver superior products that meet your needs and exceed your expectations. Elevate your projects with the BD436T and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high side switching applications and are suitable for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to implement the transistor in different applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance when used as a switch.

Maximum Power Dissipation (Abs): 36 W

High power dissipation capacity allows the transistor to handle larger loads without overheating, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 32 V

High collector-emitter voltage rating provides versatility in circuit design and allows the transistor to handle higher voltage levels.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle larger currents, making it suitable for high-current applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency ensures fast switching speed, making the transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD436T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD436T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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