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MJD42CRL

Onsemi

MJD42CRL by Onsemi

MJD42CRL by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications in small outline packages, it operates up to 140 °C with a min hFE of 15.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 12,421 parts In-Stock

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Digiode

USA . 2,058 parts In-Stock

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2,058

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AZTECH Wire

Italy . 966 parts In-Stock

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$9.370

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966

$9.370

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Kepictronics

USA . 25,000 parts In-Stock

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Kulean Microsystems

USA . 6,649 parts In-Stock

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SupplyDigital Components

Austria . 4,847 parts In-Stock

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Problanco Electronics

Mexico . 2,640 parts In-Stock

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Corphita

USA . 2,071 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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TANS Electronics

Latvia . 852 parts In-Stock

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Corohmni

South Africa . 230 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi MJD42CRL Power Bipolar Junction Transistor. Manufactured by Onsemi, a trusted industry leader known for superior quality and reliability, this PNP transistor is perfect for a variety of switching applications. Its small outline package and Gull Wing terminal form make it easy to integrate into any project. With a maximum collector-emitter voltage of 100V and a maximum collector current of 6A, this transistor offers exceptional performance and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your designs with the MJD42CRL today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and integration, making it user-friendly.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Facilitates easy and secure mounting on printed circuit boards.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Terminal Form: GULL WING

Provides strong mechanical support for reliable connections.

Maximum Power Dissipation (Abs): 20 W

Capable of handling high power levels, suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained designs.

Minimum DC Current Gain (hFE): 15

Ensures proper amplification and control in the circuit.

Maximum Operating Temperature: 140 °C

Can operate effectively in high-temperature environments.

Maximum Collector-Emitter Voltage: 100 V

Can handle high voltage levels, suitable for various applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability.

Maximum Collector Current (IC): 6 A

Capable of handling high current levels for power applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for easy assembly.

Terminal Position: SINGLE

Simplifies circuit layout and connections.

Case Connection: COLLECTOR

Easy to connect in circuits with collector-based configurations.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during reflow soldering processes.

Nominal Transition Frequency (fT): 3 MHz

Offers fast switching speeds for efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD42CRL attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD42CRL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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