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MJE15034

Onsemi

MJE15034 by Onsemi

MJE15034 by Onsemi is a NPN BJT transistor with 50W power dissipation, 350V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 8,500 parts In-Stock

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8,500

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Vyrian

USA . 5,733 parts In-Stock

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Digiode

USA . 1,948 parts In-Stock

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LittleDiode

UK . 1 parts In-Stock

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Component Stockers USA

USA . 1,435 parts In-Stock

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$1.080

100+ parts

$1.020

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$0.990

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1,435

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$0.990

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AZTECH Wire

Italy . 647 parts In-Stock

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$8.610

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647

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Kepictronics

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 6,390 parts In-Stock

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Problanco Electronics

Mexico . 4,498 parts In-Stock

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SupplyDigital Components

Austria . 2,367 parts In-Stock

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UHIMA Technologies

Türkiye . 922 parts In-Stock

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Corphita

USA . 788 parts In-Stock

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TANS Electronics

Latvia . 534 parts In-Stock

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Corohmni

South Africa . 489 parts In-Stock

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Overview

Experience exceptional performance and reliability with the MJE15034 by Onsemi, a top-tier manufacturer of high-quality Power Bipolar Junction Transistors. This NPN transistor is ideal for amplifier applications, offering a maximum power dissipation of 50W and a maximum collector-emitter voltage of 350V. With a minimum DC current gain of 10 and a maximum operating temperature of 150 °C, this transistor delivers premium functionality and durability. Trust Onsemi to provide cutting-edge technology in a convenient rectangular package style, making it easy to integrate into your projects. Upgrade your design with the MJE15034 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material helps in providing good insulation and protection to the internal components of the transistor, ensuring its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation of 50 W, this transistor can handle high power levels without getting damaged, making it suitable for applications requiring high power amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures that the transistor can withstand elevated temperatures, making it suitable for use in various environments.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating of 350 V allows the transistor to handle high voltage levels, making it suitable for applications where higher voltages are involved.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current levels, making it suitable for applications that require high current amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE15034 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE15034 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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