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BCX53H6327XTSA1

Infineon Technologies

BCX53H6327XTSA1 by Infineon Technologies

BCX53H6327XTSA1 by Infineon Technologies is a PNP BJT transistor with 80V VCEO, 1A IC, and 2W power dissipation. Ideal for amplifier applications, it has a min hFE of 40 and operates up to 150°C. This surface-mount transistor in a small outline package is AEC-Q101 compliant.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 81,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.187

10k+ parts

$0.105

81,000

-

-

$0.187

$0.105

Arrow

USA . 11,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.133

10k+ parts

$0.105

11,000

-

-

$0.133

$0.105

Verical

USA . 10,900 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.167

10,900

-

-

-

$0.167

Rochester

USA . 10,900 parts In-Stock

1+ parts

-

100+ parts

$0.180

1k+ parts

$0.149

10k+ parts

$0.133

10,900

-

$0.180

$0.149

$0.133

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,003 parts In-Stock

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4,003

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VNN

France . 3,703 parts In-Stock

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3,703

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.377

10k+ parts

$0.349

2,000

-

-

$0.377

$0.349

Digiode

USA . 314 parts In-Stock

1+ parts

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314

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TME

Poland . 102 parts In-Stock

1+ parts

-

100+ parts

$0.191

1k+ parts

$0.154

10k+ parts

-

102

-

$0.191

$0.154

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 80,558 parts In-Stock

1+ parts

$0.159

100+ parts

-

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80,558

$0.159

-

-

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Modulus Dynamics

Lithuania . 19,816 parts In-Stock

1+ parts

$0.208

100+ parts

$0.200

1k+ parts

$0.191

10k+ parts

-

19,816

$0.208

$0.200

$0.191

-

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.559

100+ parts

$0.509

1k+ parts

$0.458

10k+ parts

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20

$0.559

$0.509

$0.458

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AZTECH Wire

Italy . 1,052 parts In-Stock

1+ parts

$15.240

100+ parts

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1,052

$15.240

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Andel Nordic

Denmark . 86 parts In-Stock

1+ parts

$24.820

100+ parts

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$17.372

10k+ parts

$17.372

86

$24.820

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$17.372

$17.372

Perfect Parts

USA . 136,640 parts In-Stock

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136,640

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Glotronic Ltd.

UK . 64,800 parts In-Stock

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64,800

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Eastek

USA . 8,000 parts In-Stock

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$0.414

10k+ parts

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8,000

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$0.414

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Corphita

USA . 482 parts In-Stock

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482

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Overview

Enhance your electronic projects with the BCX53H6327XTSA1 by Infineon Technologies. Crafted with precision and quality, this Power Bipolar Junction Transistor offers exceptional performance as an amplifier in a compact and durable package. Ideal for a wide range of applications, this PNP transistor delivers reliable power dissipation, high collector current, and fast transition frequency. Trust in Infineon Technologies to provide you with cutting-edge technology that brings value and efficiency to your designs. Elevate your creations with the BCX53H6327XTSA1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Allows for easy integration into circuits where PNP transistors are required, enhancing compatibility.

Configuration: SINGLE

Simplified design and implementation in circuits, making it easier to use and troubleshoot.

Transistor Application: AMPLIFIER

Optimized for use in amplifier circuits, ensuring high performance and reliability in audio or signal amplification.

Surface Mount: YES

Enables easy and space-saving mounting on PCBs, ideal for compact electronic devices or designs.

Package Shape: RECTANGULAR

Provides a standardized form factor for easy integration and compatibility with existing circuit layouts.

Terminal Form: FLAT

Facilitates soldering and connection to other components, ensuring secure and reliable electrical contact.

Maximum Power Dissipation (Abs): 2 W

Can handle high power levels without overheating, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size allows for efficient use of space on PCBs, especially in densely populated circuits.

Minimum DC Current Gain (hFE): 40

Ensures consistent and predictable amplification performance in various circuit conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, providing reliability in diverse operating conditions.

Maximum Collector-Emitter Voltage: 80 V

Supports a wide range of voltage levels in circuits, allowing for versatile applications.

Transistor Element Material: SILICON

Silicon offers excellent electrical properties, enhancing performance and reliability of the transistor.

Maximum Collector Current (IC): 1 A

Capable of handling high current levels, making it suitable for power amplification applications.

Terminal Finish: TIN

Tin finish provides good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: SINGLE

Simplified connection layout for easier PCB design and assembly, reducing the risk of errors.

Case Connection: COLLECTOR

Efficient thermal management through direct connection to the collector, dissipating heat effectively.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes, ensuring robust solder joints.

Reference Standard: AEC-Q101

Compliance with automotive quality standards for reliability and performance in automotive applications.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency allows for fast switching speeds, suitable for high-frequency amplification applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX53H6327XTSA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX53H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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