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BCX51-16

NXP Semiconductors

BCX51-16 by NXP Semiconductors

BCX51-16 by NXP is a PNP BJT transistor with 1W power dissipation, hFE of 100, and 45V collector-emitter voltage. Ideal for amplifier applications, it has a small outline package style and operates up to 150°C.

Median Price

$10.668

Lifecycle Status

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Element14

Singapore . 2,290 parts In-Stock

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$21.080

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Farnell

UK . 1,200 parts In-Stock

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Digiode

USA . 3,396 parts In-Stock

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Nova Conductors

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Zilex Electronics Inc.

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ComSIT Distribution GmbH

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Vyrian

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ComSIT USA

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Holdelec - ElecDif-Pro

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A2Z Electronics, Inc.

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Ack Elektronik San.Tic.Ltd.Sti

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Corel Iberica Componentes, S.L.

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Sunrise Surplus Inc.

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J2 Sourcing AB

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Bristol Electronics

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Micros

Poland . 2,000 parts In-Stock

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Cyclops Electronics Ltd

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Pegasus Components GmbH

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VNN

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ECAB

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PC Components Company LLC

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Ashlea Components Ltd

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Ukraine . 178 parts In-Stock

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Component Sense

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Corphita

USA . 1,170 parts In-Stock

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Aranea Global

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Argo Parts USA

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AZTECH Wire

Italy . 2,536 parts In-Stock

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Continental Prestige Electronics

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Modulus Dynamics

Lithuania . 16,255 parts In-Stock

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Andel Nordic

Denmark . 537 parts In-Stock

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Lixinc

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UNI Independent Distributors

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Perfect Parts

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Alle Elektronik GmbH

Germany . 1,140 parts In-Stock

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Supply Digital

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Computer Components Inc. - USA

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Overview

Enhance your electronic projects with the BCX51-16 Power Bipolar Junction Transistor by NXP Semiconductors. Known for their high-quality components, NXP delivers reliable and efficient products to meet your needs. This PNP transistor is perfect for amplifier applications, offering a maximum power dissipation of 1W and a minimum DC current gain of 100. With its small outline package and maximum operating temperature of 150°C, the BCX51-16 provides exceptional performance and durability for your projects. Upgrade your designs with the value and benefits this transistor has to offer.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for long-term use.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs, making it a versatile choice for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and troubleshooting, making it easier to work with.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and high-quality sound output.

Surface Mount: YES

The surface mount capability allows for easy and compact integration onto circuit boards, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor, making it compatible with a wide range of circuit layouts.

Terminal Form: FLAT

The flat terminal form ensures secure connections and easy soldering, enhancing the reliability of the transistor.

No. of Terminals: 3

With 3 terminals, this transistor offers the necessary connections for basic amplifier circuits, making it a straightforward choice for amplification projects.

Maximum Power Dissipation (Abs): 1 W

The high power dissipation capability allows the transistor to handle substantial loads without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures consistent amplification, providing a stable performance for amplifier applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating ensures that the transistor can handle high voltage loads, enhancing its versatility.

Transistor Element Material: SILICON

The silicon element material offers excellent electrical properties, ensuring high performance and reliability.

Maximum Collector Current (IC): 1 A

The high collector current rating allows the transistor to handle significant current loads, making it suitable for power applications.

Terminal Finish: Tin (Sn)

The tin terminal finish ensures reliable and secure connections, preventing corrosion and maintaining electrical conductivity.

Terminal Position: SINGLE

The single terminal position simplifies circuit design and assembly, making it easier to work with the transistor.

Case Connection: COLLECTOR

The case connection at the collector terminal improves thermal dissipation, enhancing the transistor's overall performance.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature minimizes the risk of damage during soldering, ensuring the transistor's longevity.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for efficient soldering processes, ensuring a reliable connection to the circuit board.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency ensures excellent high-frequency performance, making it suitable for audio and RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX51-16 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-243

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX51-16 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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