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BCX5516H6327XTSA1

Infineon Technologies

BCX5516H6327XTSA1 by Infineon Technologies

BCX5516H6327XTSA1 by Infineon is a NPN BJT transistor with 60V VCE, 1A IC, and 100MHz fT. Ideal for amplifier applications, it has a max power dissipation of 2W in a small outline package. With AEC-Q101 standard compliance, it operates up to 150°C with flat terminals.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$2.269

100+ parts

$2.065

1k+ parts

$1.861

10k+ parts

-

500

$2.269

$2.065

$1.861

-

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.117

10k+ parts

-

4,000

-

-

$0.117

-

Verical

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.117

10k+ parts

-

4,000

-

-

$0.117

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Chip1Stop

Japan . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.144

10k+ parts

-

4,000

-

-

$0.144

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Rochester

USA . 429 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.139

10k+ parts

$0.124

429

-

$0.168

$0.139

$0.124

DigiKey

USA . 429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.700

10k+ parts

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429

-

-

$0.700

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

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500

$0.087

-

-

-

Digiode

USA . 979 parts In-Stock

1+ parts

$0.101

100+ parts

-

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-

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979

$0.101

-

-

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DigiKey Marketplace

USA . 27,362 parts In-Stock

1+ parts

-

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27,362

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-

-

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Vyrian

USA . 12,403 parts In-Stock

1+ parts

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12,403

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Avant Electronics Limited

UK . 5,000 parts In-Stock

1+ parts

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5,000

-

-

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TME

Poland . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.129

10k+ parts

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4,000

-

-

$0.129

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VNN

France . 671 parts In-Stock

1+ parts

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100+ parts

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671

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,788 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

$0.084

4,788

$0.087

-

-

$0.084

Continental Prestige Electronics

USA . 267 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

267

$0.087

-

-

$0.085

Ampacity Inc.

Singapore . 12,513 parts In-Stock

1+ parts

$0.090

100+ parts

-

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12,513

$0.090

-

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Semicontronic

India . 12,175 parts In-Stock

1+ parts

$0.090

100+ parts

$0.088

1k+ parts

$0.087

10k+ parts

-

12,175

$0.090

$0.088

$0.087

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Corphita

USA . 636 parts In-Stock

1+ parts

$0.095

100+ parts

-

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636

$0.095

-

-

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Modulus Dynamics

Lithuania . 4,173 parts In-Stock

1+ parts

$0.124

100+ parts

$0.119

1k+ parts

$0.114

10k+ parts

-

4,173

$0.124

$0.119

$0.114

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Corohmni

South Africa . 301 parts In-Stock

1+ parts

$0.124

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301

$0.124

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Aztec Data Supply Inc.

USA . 47,772 parts In-Stock

1+ parts

$0.537

100+ parts

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47,772

$0.537

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.269

100+ parts

$2.065

1k+ parts

$1.861

10k+ parts

-

500

$2.269

$2.065

$1.861

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.409

10k+ parts

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10,000

-

-

$0.409

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Perfect Parts

USA . 4,480 parts In-Stock

1+ parts

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4,480

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QUARKTWIN TECHNOLOGY LTD

USA . 3,005 parts In-Stock

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3,005

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.085

1k+ parts

$0.082

10k+ parts

$0.081

100

-

$0.085

$0.082

$0.081

Overview

Experience enhanced performance and reliability with the BCX5516H6327XTSA1 by Infineon Technologies. As a leading manufacturer, Infineon Technologies guarantees top-notch quality in their Power Bipolar Junction Transistors (BJT). Perfect for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 60 V and a maximum collector current of 1 A, making it ideal for various electronic projects. With a minimum DC current gain of 100 and a nominal transition frequency of 100 MHz, this transistor ensures optimal efficiency and functionality. Upgrade your electronic devices with the BCX5516H6327XTSA1 and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Maximum Power Dissipation (Abs): 2 W

Can handle higher power levels without overheating, making it ideal for applications that require power amplification.

No. of Terminals: 3

Simple to connect in circuits and allows for easy integration into various electronic designs.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, increasing versatility and reliability.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications where higher voltages are required, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for higher frequency response in amplifier circuits, improving performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5516H6327XTSA1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCX5516H6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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