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BCX5416TA

Diodes Incorporated

BCX5416TA by Diodes Incorporated

BCX5416TA by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.

Median Price

$0.172

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,780 parts In-Stock

1+ parts

$0.346

100+ parts

$0.103

1k+ parts

$0.099

10k+ parts

-

1,780

$0.346

$0.103

$0.099

-

Verical

USA . 109,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.067

109,000

-

-

-

$0.067

Arrow

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.106

10k+ parts

$0.058

10

-

$0.172

$0.106

$0.058

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 473 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

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473

$0.121

-

-

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Vyrian

USA . 131,598 parts In-Stock

1+ parts

-

100+ parts

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131,598

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-

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Chip Stock

USA . 38,000 parts In-Stock

1+ parts

-

100+ parts

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38,000

-

-

-

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IBS Electronics

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.154

10k+ parts

$0.150

28,000

-

-

$0.154

$0.150

VNN

France . 13,993 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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13,993

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-

-

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ComSIT Distribution GmbH

Germany . 8,000 parts In-Stock

1+ parts

-

100+ parts

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8,000

-

-

-

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ComSIT USA

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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8,000

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

-

-

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.244

10k+ parts

$0.220

4,000

-

-

$0.244

$0.220

Rutronik

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.083

10k+ parts

$0.070

1,000

-

-

$0.083

$0.070

ACDS - Activité Composants Distribution Service

France . 771 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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771

-

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Inventory MP

USA . 272 parts In-Stock

1+ parts

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272

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Bristol Electronics

USA . 272 parts In-Stock

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272

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 116,843 parts In-Stock

1+ parts

$0.045

100+ parts

$0.044

1k+ parts

$0.044

10k+ parts

-

116,843

$0.045

$0.044

$0.044

-

Ampacity Inc.

Singapore . 88,877 parts In-Stock

1+ parts

$0.045

100+ parts

-

1k+ parts

-

10k+ parts

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88,877

$0.045

-

-

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Argo Parts USA

USA . 2,935 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

-

10k+ parts

$0.103

2,935

$0.106

-

-

$0.103

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.119

100+ parts

-

1k+ parts

$0.114

10k+ parts

-

100

$0.119

-

$0.114

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Component Stockers USA

USA . 47,882 parts In-Stock

1+ parts

$0.230

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.040

47,882

$0.230

$0.070

$0.070

$0.040

Continental Prestige Electronics

USA . 7,391 parts In-Stock

1+ parts

$0.428

100+ parts

$0.175

1k+ parts

$0.079

10k+ parts

$0.071

7,391

$0.428

$0.175

$0.079

$0.071

Corohmni

South Africa . 464 parts In-Stock

1+ parts

$0.870

100+ parts

-

1k+ parts

-

10k+ parts

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464

$0.870

-

-

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Aztec Data Supply Inc.

USA . 234 parts In-Stock

1+ parts

$0.953

100+ parts

-

1k+ parts

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234

$0.953

-

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

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100+ parts

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306,000

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-

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Eastek

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.059

10k+ parts

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129,000

-

-

$0.059

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QUARKTWIN TECHNOLOGY LTD

USA . 22,267 parts In-Stock

1+ parts

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100+ parts

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22,267

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Glotronic Ltd.

UK . 6,400 parts In-Stock

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6,400

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Perfect Parts

USA . 4,142 parts In-Stock

1+ parts

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4,142

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-

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Kepictronics

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

-

-

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GreenTree Electronics

Israel . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

-

-

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Cyclops Electronics Ltd (Excess)

UK . 771 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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771

-

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.115

10k+ parts

$0.113

50

-

$0.119

$0.115

$0.113

Overview

Discover the BCX5416TA by Diodes Incorporated, a top-quality Power BJT that is perfect for switching applications. With a maximum VCEsat of only 0.5V and a minimum DC current gain of 100, this NPN transistor offers superior performance and reliability. Its small outline package and matte tin terminal finish make it ideal for surface mount applications, ensuring easy integration into your designs. Trust in Diodes Incorporated's reputation for excellence and choose the BCX5416TA for all your power transistor needs. Unlock new possibilities and maximize efficiency with this innovative product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material ensures durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN polarity allows for use in common switching applications, providing versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making it easier to incorporate into projects.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy installation and compact design, suitable for modern electronic devices.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal voltage drop when the transistor is in the on state, leading to efficient operation.

Package Shape: RECTANGULAR

Rectangular package shape provides ease of handling and mounting in various applications.

Terminal Form: FLAT

Flat terminal form facilitates soldering and connection, ensuring a secure and reliable electrical contact.

No. of Terminals: 3

Three terminals provide the necessary connections for the transistor to function effectively in a circuit.

Maximum Power Dissipation (Abs): 2 W

High power dissipation allows the transistor to handle significant power loads without overheating or failure.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact circuit design, suitable for portable or space-constrained applications.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stability and consistency in amplifying current in the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliability and performance in a variety of environmental conditions.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance minimizes signal distortion and ensures high-frequency performance in the transistor.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows the transistor to handle high voltage levels safely without breakdown.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures efficiency and reliability in operation, common in modern semiconductor devices.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature support allows the transistor to function in cold environments without performance degradation.

Maximum Collector Current (IC): 1 A

High collector current rating enables the transistor to handle significant current loads without damage or instability.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability in electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and connection, making it easier to integrate the transistor into a design.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and electrical connection, improving overall performance and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures reliable soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures compatibility with modern lead-free soldering processes, making it suitable for RoHS compliant applications.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency indicates fast switching speeds and high-frequency performance, suitable for rapid signal processing and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5416TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX5416TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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