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BCX5616TC

Diodes Incorporated

BCX5616TC by Diodes Incorporated

BCX5616TC by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.

Median Price

$0.117

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$2.437

100+ parts

$2.412

1k+ parts

-

10k+ parts

-

100

$2.437

$2.412

-

-

Verical

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.043

36,000

-

-

-

$0.043

Farnell

UK . 7,900 parts In-Stock

1+ parts

-

100+ parts

$0.117

1k+ parts

$0.074

10k+ parts

$0.066

7,900

-

$0.117

$0.074

$0.066

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

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750

$0.078

-

-

-

NAC Semi

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

56,000

-

-

-

$0.078

Vyrian

USA . 24,387 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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24,387

-

-

-

-

Chip Stock

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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15,000

-

-

-

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Rutronik

Germany . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.052

4,000

-

-

-

$0.052

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 40,225 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

10k+ parts

-

40,225

$0.037

$0.036

$0.036

-

Argo Parts USA

USA . 3,481 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

3,481

$0.072

-

-

$0.070

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.078

-

-

-

Corohmni

South Africa . 185 parts In-Stock

1+ parts

$0.844

100+ parts

-

1k+ parts

-

10k+ parts

-

185

$0.844

-

-

-

Aztec Data Supply Inc.

USA . 2,560 parts In-Stock

1+ parts

$0.991

100+ parts

-

1k+ parts

-

10k+ parts

-

2,560

$0.991

-

-

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$2.437

100+ parts

$2.412

1k+ parts

$2.315

10k+ parts

-

100

$2.437

$2.412

$2.315

-

Glotronic Ltd.

UK . 324,308 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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324,308

-

-

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-

GreenTree Electronics

Israel . 216,000 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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216,000

-

-

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Lixinc

USA . 9,751 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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9,751

-

-

-

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Continental Prestige Electronics

USA . 7,930 parts In-Stock

1+ parts

-

100+ parts

$0.076

1k+ parts

$0.063

10k+ parts

-

7,930

-

$0.076

$0.063

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,000

-

-

-

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Kepictronics

USA . 3,945 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,945

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-

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iodParts Technologies Inc.

India . 3,830 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,830

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-

-

-

Overview

Enhance your electronic projects with the BCX5616TC by Diodes Incorporated, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a low VCEsat of just 0.5V and a high DC current gain of 100, this NPN transistor offers exceptional performance in a compact small outline package. Trust in the reliability and expertise of Diodes Incorporated to deliver cutting-edge semiconductor solutions that bring value and efficiency to your designs. Upgrade your devices today with the BCX5616TC and experience the benefits of superior quality and enhanced functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

With NPN configuration, this transistor allows for easy integration into existing circuits, making it a versatile option for different projects.

Configuration: SINGLE

The single configuration simplifies circuit design and enhances overall efficiency, making this transistor a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures high performance and reliability in controlling electronic devices.

Surface Mount: YES

The surface mount feature allows for easy and compact installation, making this transistor suitable for space-constrained designs.

Maximum VCEsat: 0.5 V

With a low VCEsat value, this transistor minimizes power loss and improves efficiency in operation, making it an energy-efficient choice.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to mount and secure the transistor, ensuring stability and reliability in various environments.

Terminal Form: FLAT

The flat terminal form simplifies connection and installation, making this transistor user-friendly and compatible with different setups.

No. of Elements: 1

With a single element, this transistor offers a straightforward design and enhanced performance, making it a reliable choice for various applications.

No. of Terminals: 3

The three terminals provide flexibility in connection options, allowing for versatile circuit configurations with this transistor.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power loads and ensure stable operation in demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact designs, making this transistor ideal for size-constrained applications.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor offers consistent and reliable amplification, ensuring precision in signal control.

Maximum Operating Temperature: 150 °C

The high operating temperature range of 150°C ensures reliable performance even in harsh environments, making this transistor suitable for a wide range of applications.

Maximum Collector-Base Capacitance: 25 pF

The low collector-base capacitance minimizes signal distortion and improves overall performance, making this transistor a good choice for high-frequency applications.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80V, this transistor can handle high voltages safely, making it a reliable choice for power applications.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high reliability and durability, ensuring long-term performance in various operating conditions.

Minimum Operating Temperature: -55 °C

The wide operating temperature range of -55°C ensures reliable performance even in extreme cold conditions, making this transistor suitable for versatile applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle high current loads, making it a reliable choice for power circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a secure connection and long-term reliability for the transistor.

Terminal Position: SINGLE

The single terminal position simplifies circuit connections and ensures easy integration, making this transistor user-friendly and compatible with various setups.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor is resistant to moisture damage and ensures reliability in humid environments, making it a durable choice for long-term use.

Case Connection: COLLECTOR

The collector case connection enhances thermal dissipation and ensures efficient heat transfer, making this transistor suitable for high-power applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor can withstand the soldering process without degradation, ensuring reliable performance during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and secure connection, making this transistor suitable for reliable and durable installations.

Nominal Transition Frequency (fT): 150 MHz

With a nominal transition frequency of 150 MHz, this transistor offers fast switching speeds and high-frequency performance, making it suitable for demanding applications requiring precise signal control.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5616TC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX5616TC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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