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BCX5316-13R

Diodes Incorporated

BCX5316-13R by Diodes Incorporated

BCX5316-13R by Diodes Inc. is a PNP BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it has a collector-emitter voltage of 80V and transition frequency of 150MHz.

Median Price

$0.141

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

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$0.141

24,000

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-

$0.141

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.203

100+ parts

-

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100

$0.203

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Vyrian

USA . 5,301 parts In-Stock

1+ parts

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5,301

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VNN

France . 2,563 parts In-Stock

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2,563

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 10,929 parts In-Stock

1+ parts

$0.120

100+ parts

$0.117

1k+ parts

$0.116

10k+ parts

-

10,929

$0.120

$0.117

$0.116

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Ampacity Inc.

Singapore . 10,703 parts In-Stock

1+ parts

$0.120

100+ parts

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10,703

$0.120

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Continental Prestige Electronics

USA . 4,121 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

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10k+ parts

$0.199

4,121

$0.203

-

-

$0.199

Argo Parts USA

USA . 1,126 parts In-Stock

1+ parts

$0.203

100+ parts

-

1k+ parts

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10k+ parts

$0.197

1,126

$0.203

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$0.197

Corohmni

South Africa . 256 parts In-Stock

1+ parts

$0.203

100+ parts

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256

$0.203

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Aztec Data Supply Inc.

USA . 222 parts In-Stock

1+ parts

$1.330

100+ parts

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222

$1.330

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

1+ parts

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70,000

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QUARKTWIN TECHNOLOGY LTD

USA . 7,149 parts In-Stock

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7,149

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Netroflash

USA . 500 parts In-Stock

1+ parts

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100+ parts

$0.199

1k+ parts

$0.193

10k+ parts

$0.189

500

-

$0.199

$0.193

$0.189

Overview

Unlock the power of seamless switching with the BCX5316-13R by Diodes Incorporated. Crafted with precision using high-quality materials, this PNP Power BJT transistor is designed to enhance your electronic applications with efficiency and reliability. Ideal for a wide range of uses, from consumer electronics to industrial automation, this product boasts a maximum VCEsat of just 0.5V, ensuring optimal performance. Say goodbye to overheating and hello to superior power dissipation capabilities, making this transistor a game-changer for your projects. Experience innovation at its finest with the BCX5316-13R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor.

Polarity or Channel Type: PNP

PNP polarity allows for easy integration into PNP transistor circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and application.

Transistor Application: SWITCHING

Designed specifically for switching applications for optimal performance.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB integration.

Maximum VCEsat: 0.5 V

Low VCEsat value ensures efficient switching performance with minimal power loss.

Package Shape: RECTANGULAR

Rectangular shape provides a standard and easy-to-mount package design.

Terminal Form: FLAT

Flat terminals allow for secure and reliable soldering connections.

No. of Terminals: 3

3 terminals provide simple connections for basic circuit configurations.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, it can handle high power loads.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for high-density mounting.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures stable and reliable amplification of current.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in various environments.

Maximum Collector-Base Capacitance: 25 pF

Low collector-base capacitance minimizes input capacitance effects in high-frequency circuits.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating provides a safety margin for voltage spikes.

Transistor Element Material: SILICON

Silicon material ensures high performance and long-term reliability.

Minimum Operating Temperature: -55 °C

Wide minimum operating temperature range allows for operation in extreme conditions.

Maximum Collector Current (IC): 1 A

High collector current rating allows for handling higher current loads.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies board layout and connection arrangement.

Case Connection: COLLECTOR

Case connection at the collector terminal allows for easy heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow time ensures proper soldering and reliability in manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for lead-free soldering processes.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency enables fast switching speeds for efficient operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5316-13R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX5316-13R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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