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BCX56TA

Diodes Incorporated

BCX56TA by Diodes Incorporated

BCX56TA by Diodes Inc. is a NPN BJT transistor with VCEsat of 0.5V, hFE of 25, and IC of 1A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 80V. Its small outline package makes it suitable for surface mount designs.

Median Price

$0.084

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 175,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.057

175,000

-

-

-

$0.057

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.084

10k+ parts

$0.059

2,000

-

-

$0.084

$0.059

Future Electronics

Canada . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.065

10k+ parts

$0.062

2,000

-

-

$0.065

$0.062

Farnell

UK . 520 parts In-Stock

1+ parts

-

100+ parts

$0.126

1k+ parts

$0.082

10k+ parts

$0.080

520

-

$0.126

$0.082

$0.080

Element14

Singapore . 520 parts In-Stock

1+ parts

-

100+ parts

$0.138

1k+ parts

$0.093

10k+ parts

$0.092

520

-

$0.138

$0.093

$0.092

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

-

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-

10

$0.106

-

-

-

TME

Poland . 1 parts In-Stock

1+ parts

$0.370

100+ parts

$0.147

1k+ parts

$0.092

10k+ parts

$0.071

1

$0.370

$0.147

$0.092

$0.071

Chip Stock

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

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45,000

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-

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Vyrian

USA . 4,400 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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4,400

-

-

-

-

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,000

-

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NAC Semi

USA . 58 parts In-Stock

1+ parts

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58

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 4,359 parts In-Stock

1+ parts

$0.039

100+ parts

$0.038

1k+ parts

$0.038

10k+ parts

-

4,359

$0.039

$0.038

$0.038

-

Argo Parts USA

USA . 2,535 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

-

10k+ parts

$0.103

2,535

$0.106

-

-

$0.103

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.106

-

-

-

Continental Prestige Electronics

USA . 965 parts In-Stock

1+ parts

$0.428

100+ parts

$0.175

1k+ parts

$0.079

10k+ parts

$0.071

965

$0.428

$0.175

$0.079

$0.071

Aztec Data Supply Inc.

USA . 4,254 parts In-Stock

1+ parts

$1.165

100+ parts

-

1k+ parts

-

10k+ parts

-

4,254

$1.165

-

-

-

Corohmni

South Africa . 253 parts In-Stock

1+ parts

$1.636

100+ parts

-

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10k+ parts

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253

$1.636

-

-

-

Metaverse IC Inc.

Canada . 306,000 parts In-Stock

1+ parts

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100+ parts

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306,000

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-

-

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Eastek

USA . 107,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.060

10k+ parts

-

107,000

-

-

$0.060

-

QUARKTWIN TECHNOLOGY LTD

USA . 29,916 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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29,916

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Perfect Parts

USA . 29,680 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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29,680

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-

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Lixinc

USA . 3,254 parts In-Stock

1+ parts

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3,254

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Kepictronics

USA . 1,180 parts In-Stock

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1,180

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GreenTree Electronics

Israel . 547 parts In-Stock

1+ parts

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100+ parts

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547

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-

Overview

Discover the BCX56TA by Diodes Incorporated, a top-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum VCEsat of just 0.5V and a maximum collector-emitter voltage of 80V, this NPN transistor offers exceptional performance in a small outline package. Whether you're working on industrial automation or consumer electronics, the BCX56TA delivers reliable power dissipation up to 2W and a minimum DC current gain of 25. Trust Diodes Incorporated's expertise in semiconductor manufacturing to bring you a versatile and efficient solution for your design needs. Experience the value and benefits that the BCX56TA brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into circuits and provides efficient switching capabilities.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and reliable on/off performance.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss and improves overall efficiency of the transistor in operation.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for use in a wide range of applications without risking damage to the transistor.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate power loads while maintaining stability.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency ensures fast response times and reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX56TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX56TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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