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BCX5610TA

Diodes Incorporated

BCX5610TA by Diodes Incorporated

BCX5610TA by Diodes Inc. is a NPN BJT transistor for switching applications. It has a VCEsat of 0.5V, hFE of 63, and can handle up to 1A collector current. With a max operating temperature of 150°C, it is suitable for high-power switching circuits in various electronic devices.

Median Price

$0.326

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4 parts In-Stock

1+ parts

$0.560

100+ parts

$0.222

1k+ parts

$0.119

10k+ parts

-

4

$0.560

$0.222

$0.119

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Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.913

100+ parts

$0.831

1k+ parts

$0.749

10k+ parts

-

100

$0.913

$0.831

$0.749

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Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.092

10k+ parts

$0.082

1,000

-

-

$0.092

$0.082

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.092

10k+ parts

$0.083

1,000

-

-

$0.092

$0.083

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 49 parts In-Stock

1+ parts

$0.138

100+ parts

-

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49

$0.138

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Bristol Electronics

USA . 924 parts In-Stock

1+ parts

$0.329

100+ parts

$0.165

1k+ parts

$0.066

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924

$0.329

$0.165

$0.066

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Chip Stock

USA . 59,000 parts In-Stock

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-

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59,000

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Vyrian

USA . 2,059 parts In-Stock

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2,059

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.073

2,000

-

-

-

$0.073

VNN

France . 1,783 parts In-Stock

1+ parts

-

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1,783

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

1+ parts

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1,000

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Dan-Mar Components

USA . 1,000 parts In-Stock

1+ parts

-

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1,000

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,000 parts In-Stock

1+ parts

-

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-

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1,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,976 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

-

10k+ parts

-

1,976

$0.086

-

-

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Semicontronic

India . 1,973 parts In-Stock

1+ parts

$0.086

100+ parts

$0.084

1k+ parts

$0.083

10k+ parts

-

1,973

$0.086

$0.084

$0.083

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Argo Parts USA

USA . 2,252 parts In-Stock

1+ parts

$0.122

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

2,252

$0.122

-

-

$0.118

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.135

100+ parts

-

1k+ parts

$0.130

10k+ parts

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50

$0.135

-

$0.130

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Corohmni

South Africa . 234 parts In-Stock

1+ parts

$0.604

100+ parts

-

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234

$0.604

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-

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.913

100+ parts

$0.831

1k+ parts

$0.749

10k+ parts

-

100

$0.913

$0.831

$0.749

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Aztec Data Supply Inc.

USA . 1,095 parts In-Stock

1+ parts

$0.955

100+ parts

-

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1,095

$0.955

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Modulus Dynamics

Lithuania . 8,379 parts In-Stock

1+ parts

$1.324

100+ parts

$1.324

1k+ parts

$1.324

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8,379

$1.324

$1.324

$1.324

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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306,000

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Eastek

USA . 15,000 parts In-Stock

1+ parts

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1k+ parts

$0.060

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15,000

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-

$0.060

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Perfect Parts

USA . 14,626 parts In-Stock

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14,626

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Lixinc

USA . 12,918 parts In-Stock

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12,918

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Continental Prestige Electronics

USA . 3,835 parts In-Stock

1+ parts

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100+ parts

$0.175

1k+ parts

$0.092

10k+ parts

$0.087

3,835

-

$0.175

$0.092

$0.087

Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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QUARKTWIN TECHNOLOGY LTD

USA . 2,533 parts In-Stock

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2,533

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Kepictronics

USA . 2,280 parts In-Stock

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2,280

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GreenTree Electronics

Israel . 2,000 parts In-Stock

1+ parts

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2,000

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Overview

Experience the next level of power control with the BCX5610TA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated brings you a high-quality Power Bipolar Junction Transistor that is perfect for various switching applications. The BCX5610TA offers exceptional value with its low VCEsat, high DC current gain, and impressive operating temperature range. Whether you need reliable performance in industrial, automotive, or consumer electronics, this NPN transistor is the ideal choice. Trust Diodes Incorporated to deliver superior products that exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and widely applicable.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Maximum VCEsat: 0.5 V

The low VCEsat value of 0.5 V ensures minimal power loss and high efficiency in switching operations.

Surface Mount: YES

Being surface mountable, this transistor is suitable for automated assembly processes and compact electronic designs.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2 W, this transistor can handle a significant amount of power, making it reliable for various applications.

Package Shape: RECTANGULAR

The rectangular package shape offers easy handling and soldering, enhancing the overall usability of the transistor.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the chances of errors during installation.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80 V allows this transistor to be used in a wide range of voltage applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCX5610TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCX5610TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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