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BCP53

Onsemi

BCP53 by Onsemi

Onsemi's BCP53 is a PNP power BJT with 1.5W power dissipation, hFE of 25, and 80V VCE max. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly at up to 260°C peak reflow temperature.

Median Price

$0.182

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

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Arrow

USA . 1 parts In-Stock

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$0.099

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$0.099

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DigiKey

USA . 564 parts In-Stock

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$0.370

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$0.141

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$0.093

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$0.066

564

$0.370

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$0.093

$0.066

Rochester

USA . 500 parts In-Stock

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$0.182

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$0.151

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$0.135

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Chip1Stop

Japan . 1 parts In-Stock

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USA . 4,702 parts In-Stock

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Maritex

Poland . 926 parts In-Stock

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926

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Nova Conductors

Japan . 150 parts In-Stock

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Chip Stock

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ComSIT USA

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Micros

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ACDS - Activité Composants Distribution Service

France . 2,338 parts In-Stock

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ABC Electronics Ltd.

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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LIBRA Elektronik GmbH

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Component Sense

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PC Components Company LLC

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Corel Iberica Componentes, S.L.

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Ukraine . 3 parts In-Stock

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Corohmni

South Africa . 268 parts In-Stock

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Corphita

USA . 5,161 parts In-Stock

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Component Stockers USA

USA . 667 parts In-Stock

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AZTECH Wire

Italy . 10,882 parts In-Stock

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Modulus Dynamics

Lithuania . 2,965 parts In-Stock

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$0.217

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Argo Parts USA

USA . 1,595 parts In-Stock

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$0.249

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Continental Prestige Electronics

USA . 858 parts In-Stock

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$0.249

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.861

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$0.852

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$0.818

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IDEA Electronic Components Group

UK . 695 parts In-Stock

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$1.826

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$1.644

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MKK Technologies

India . 1,309 parts In-Stock

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$3.434

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DigiPath Technology Company

USA . 1,309 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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Kepictronics

USA . 24,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 23,491 parts In-Stock

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Assy Fe

Spain . 15,537 parts In-Stock

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S.R.D Solutions

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

USA . 4,324 parts In-Stock

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TANS Electronics

Latvia . 4,159 parts In-Stock

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Problanco Electronics

Mexico . 3,741 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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SupplyDigital Components

Austria . 2,768 parts In-Stock

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Infinite Electronics LLP (Excess)

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Parana Technologies

USA . 1,587 parts In-Stock

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Glotronic Ltd.

UK . 922 parts In-Stock

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USA . 808 parts In-Stock

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Kulean Microsystems

USA . 678 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.244

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$0.237

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UHIMA Technologies

Türkiye . 349 parts In-Stock

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UNI Independent Distributors

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Overview

Upgrade your power management solutions with the BCP53 by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers exceptional performance and reliability for switching applications. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is designed for ease of use with its surface mount capability and small outline package style. With a maximum collector-emitter voltage of 80V and a maximum collector current of 1.2A, the BCP53 provides efficient power dissipation up to 1.5W. Trust Onsemi's expertise and enhance your electronic designs with the BCP53 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design as only one transistor is needed, reducing component count and making the design more efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and reliability in such scenarios.

Surface Mount: YES

Suitable for automated assembly processes, making it easier and more cost-effective to manufacture electronic devices.

Package Shape: RECTANGULAR

Allows for efficient use of PCB space and easy placement on the circuit board.

Terminal Form: GULL WING

Facilitates easy soldering and provides a strong mechanical connection for increased reliability.

No. of Terminals: 4

Provides the necessary connections for the transistor to function effectively in the circuit.

Maximum Power Dissipation (Abs): 1.5 W

Can handle power dissipation up to 1.5W, allowing for reliable operation in various applications.

Package Style (Meter): SMALL OUTLINE

Compact size and small footprint make it suitable for applications where space is limited.

Minimum DC Current Gain (hFE): 25

Provides sufficient current gain for proper amplification, ensuring accurate signal processing.

Maximum Operating Temperature: 150 °C

Can operate effectively at temperatures up to 150°C, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 80 V

Can sustain voltages up to 80V, making it suitable for various voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon-based material offers good performance characteristics and reliability in various applications.

Maximum Collector Current (IC): 1.2 A

Can handle collector currents up to 1.2A, suitable for medium-power applications.

Terminal Finish: TIN

Tin finish provides good solderability and ensures a strong electrical connection for reliable performance.

Terminal Position: DUAL

Dual terminal position allows for easy connection to the circuit board, simplifying installation.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and offers a convenient connection point.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of 260°C, suitable for industry-standard soldering processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP53 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BCP53 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-439-2351, 5961014392351

NIIN

014392351

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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