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BD13710S

Fairchild Semiconductor

BD13710S by Fairchild Semiconductor

Fairchild Semiconductor's BD13710S is a NPN BJT transistor with 60V VCE, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The package style is flange mount with matte tin finish in a rectangular shape.

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Overview

Unlock the power of innovation with the BD13710S by Fairchild Semiconductor, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers exceptional quality and reliability for your switching applications. With a maximum power dissipation of 13W and a maximum collector-emitter voltage of 60V, this NPN transistor provides unmatched performance. Trust in Fairchild Semiconductor to deliver top-of-the-line components that exceed expectations. Experience the value and benefits of the BD13710S today and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor from external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and allows for easy integration into various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in controlling current flow.

Maximum Power Dissipation (Abs): 13 W

Can handle high power dissipation, suitable for applications that require a transistor with a high power rating.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 60 V

Can withstand high voltage levels, ensuring reliability and safety in the circuit.

Maximum Collector Current (IC): 1.5 A

Capable of handling high collector currents, making it suitable for applications that require high current switching.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD13710S attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

63

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD13710S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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