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BD13516

Fairchild Semiconductor

BD13516 by Fairchild Semiconductor

Fairchild Semiconductor's BD13516 is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 13W and can handle up to 1.5A collector current. Ideal for switching applications, it operates at temperatures up to 150°C with a transition frequency of 250MHz.

Median Price

$0.545

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Adafruit Industries

USA . 3,000 parts In-Stock

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Distrelec

Netherlands . 18 parts In-Stock

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Arrow

USA . 32,522 parts In-Stock

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DigiKey

USA . 7,186 parts In-Stock

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Mouser Electronics

USA . 2,573 parts In-Stock

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Newark

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Avnet

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Verical

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EBV Elektronik

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Element14

Singapore . 9,332 parts In-Stock

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Chip1Stop

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Digiode

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Nova Conductors

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TME

Poland . 449 parts In-Stock

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ComSIT USA

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IBS Electronics

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ComSIT Distribution GmbH

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Partservice

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Micros sp.j. W. Kędra i J. Lic

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Corphita

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Modulus Dynamics

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Corohmni

South Africa . 133 parts In-Stock

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Aranea Global

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Continental Prestige Electronics

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Argo Parts USA

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Netroflash

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Ampacity Inc.

Singapore . 12,819 parts In-Stock

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Component Stockers USA

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IDEA Electronic Components Group

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Aztec Data Supply Inc.

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MKK Technologies

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DigiPath Technology Company

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Perfect Parts

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Authorized Procurement Solutions

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Microchip USA

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Supply Digital

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Overview

Upgrade your electronic projects with the BD13516 by Fairchild Semiconductor, a high-quality Power BJT transistor that delivers reliable performance and efficiency. With a maximum power dissipation of 13W and a maximum collector-emitter voltage of 45V, this NPN transistor is perfect for switching applications. The BD13516 offers a minimum DC current gain of 100 and a nominal transition frequency of 250MHz, ensuring smooth operations. Trust in Fairchild Semiconductor's expertise in semiconductor manufacturing and enhance your designs with the BD13516 for optimal results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering fast switching speeds and high efficiency.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in power control.

Maximum Power Dissipation (Abs): 13 W

With a high power dissipation capability, this transistor can handle a significant amount of power without overheating.

Maximum Collector-Emitter Voltage: 45 V

Suitable for applications requiring higher voltage handling capabilities, providing versatility in circuit design.

Maximum Collector Current (IC): 1.5 A

Capable of handling moderate current levels, making it suitable for a wide range of switching applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring rapid on/off control.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD13516 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD13516 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

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