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BD13616STU

Onsemi

BD13616STU by Onsemi

The Onsemi BD13616STU is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max power dissipation of 13W, hFE of 100, and max collector current of 1.5A. With a max operating temp of 150°C, it's suitable for high-power switching circuits in various electronic devices.

Median Price

$0.487

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,368 parts In-Stock

1+ parts

$0.449

100+ parts

$0.296

1k+ parts

$0.266

10k+ parts

$0.250

1,368

$0.449

$0.296

$0.266

$0.250

Newark

USA . 1,000 parts In-Stock

1+ parts

$0.487

100+ parts

$0.257

1k+ parts

$0.205

10k+ parts

$0.179

1,000

$0.487

$0.257

$0.205

$0.179

Mouser Electronics

USA . 189 parts In-Stock

1+ parts

$0.640

100+ parts

$0.444

1k+ parts

$0.281

10k+ parts

$0.243

189

$0.640

$0.444

$0.281

$0.243

Farnell

UK . 1,771 parts In-Stock

1+ parts

$0.786

100+ parts

$0.312

1k+ parts

$0.277

10k+ parts

-

1,771

$0.786

$0.312

$0.277

-

DigiKey

USA . 128 parts In-Stock

1+ parts

$1.100

100+ parts

$0.493

1k+ parts

$0.437

10k+ parts

-

128

$1.100

$0.493

$0.437

-

Element14

Singapore . 2,309 parts In-Stock

1+ parts

$1.510

100+ parts

$0.598

1k+ parts

$0.459

10k+ parts

$0.410

2,309

$1.510

$0.598

$0.459

$0.410

Rochester

USA . 62,985 parts In-Stock

1+ parts

-

100+ parts

$0.288

1k+ parts

$0.239

10k+ parts

$0.213

62,985

-

$0.288

$0.239

$0.213

Verical

USA . 62,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.267

62,985

-

-

-

$0.267

Chip1Stop

Japan . 1,168 parts In-Stock

1+ parts

-

100+ parts

$0.438

1k+ parts

$0.265

10k+ parts

-

1,168

-

$0.438

$0.265

-

Flip Electronics (Authorized)

USA . 84 parts In-Stock

1+ parts

-

100+ parts

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84

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Distributors (In-Stock)

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Digiode

USA . 1,715 parts In-Stock

1+ parts

$0.224

100+ parts

-

1k+ parts

-

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1,715

$0.224

-

-

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Nova Conductors

Japan . 47 parts In-Stock

1+ parts

$0.284

100+ parts

-

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-

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47

$0.284

-

-

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Vyrian

USA . 15,576 parts In-Stock

1+ parts

-

100+ parts

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15,576

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VNN

France . 13,869 parts In-Stock

1+ parts

-

100+ parts

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13,869

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ComSIT Distribution GmbH

Germany . 3,675 parts In-Stock

1+ parts

-

100+ parts

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3,675

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-

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Flip Electronics

USA . 1,924 parts In-Stock

1+ parts

-

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1,924

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 15,500 parts In-Stock

1+ parts

$0.201

100+ parts

$0.196

1k+ parts

$0.195

10k+ parts

-

15,500

$0.201

$0.196

$0.195

-

Ampacity Inc.

Singapore . 15,433 parts In-Stock

1+ parts

$0.201

100+ parts

-

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-

10k+ parts

-

15,433

$0.201

-

-

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Corphita

USA . 1,341 parts In-Stock

1+ parts

$0.212

100+ parts

-

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-

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1,341

$0.212

-

-

-

Corohmni

South Africa . 299 parts In-Stock

1+ parts

$0.236

100+ parts

-

1k+ parts

-

10k+ parts

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299

$0.236

-

-

-

Component Stockers USA

USA . 8,395 parts In-Stock

1+ parts

$0.240

100+ parts

$0.230

1k+ parts

$0.210

10k+ parts

$0.210

8,395

$0.240

$0.230

$0.210

$0.210

Argo Parts USA

USA . 3,528 parts In-Stock

1+ parts

$0.284

100+ parts

-

1k+ parts

-

10k+ parts

$0.276

3,528

$0.284

-

-

$0.276

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.284

100+ parts

-

1k+ parts

-

10k+ parts

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100

$0.284

-

-

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Continental Prestige Electronics

USA . 1,930 parts In-Stock

1+ parts

$0.491

100+ parts

$0.214

1k+ parts

$0.172

10k+ parts

$0.169

1,930

$0.491

$0.214

$0.172

$0.169

Aztec Data Supply Inc.

USA . 4,735 parts In-Stock

1+ parts

$1.481

100+ parts

-

1k+ parts

-

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4,735

$1.481

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Perfect Parts

USA . 17,203 parts In-Stock

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17,203

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A-Z Elektronik GmbH

Germany . 9,994 parts In-Stock

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9,994

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Lixinc

USA . 7,751 parts In-Stock

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7,751

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Metaverse IC Inc.

Canada . 7,500 parts In-Stock

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7,500

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Alle Elektronik GmbH

Germany . 6,662 parts In-Stock

1+ parts

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100+ parts

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6,662

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-

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Kulean Microsystems

USA . 6,644 parts In-Stock

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6,644

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SupplyDigital Components

Austria . 4,919 parts In-Stock

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4,919

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Glotronic Ltd.

UK . 3,900 parts In-Stock

1+ parts

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3,900

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QUARKTWIN TECHNOLOGY LTD

USA . 3,448 parts In-Stock

1+ parts

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3,448

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Supply Digital

USA . 2,737 parts In-Stock

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2,737

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UHIMA Technologies

Türkiye . 822 parts In-Stock

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822

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TANS Electronics

Latvia . 519 parts In-Stock

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519

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Problanco Electronics

Mexico . 154 parts In-Stock

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154

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Overview

Unleash the power of efficiency and reliability with the BD13616STU by Onsemi. Crafted with precision and quality, this Power Bipolar Junction Transistor (BJT) offers exceptional performance in switching applications. With a maximum collector-emitter voltage of 45V and a DC current gain of 100, this PNP transistor ensures seamless operation and durability. Whether you're looking to enhance your electronic projects or streamline your industrial processes, the BD13616STU is the perfect choice for delivering consistent results. Trust Onsemi's expertise and innovation to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the transistor.

Polarity or Channel Type: PNP

Allows for easy integration into circuits requiring PNP transistors, increasing compatibility.

Configuration: SINGLE

Simplified design and ease of use in applications that require a single transistor.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance in relevant circuits.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement in circuit boards, enhancing usability.

Terminal Form: THROUGH-HOLE

Simplifies soldering and assembly processes, making it user-friendly for electronics hobbyists and professionals.

Maximum Power Dissipation (Abs): 13 W

Higher power dissipation capability allows for handling larger loads and more demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation, enhancing reliability in operation.

Minimum DC Current Gain (hFE): 100

High current gain ensures efficient amplification and optimal performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in diverse environments and applications.

Maximum Collector-Emitter Voltage: 45 V

Handles higher voltages safely, making it suitable for circuits with varying voltage requirements.

Transistor Element Material: SILICON

Silicon material offers reliability and stability in performance, ensuring consistent operation over time.

Maximum Collector Current (IC): 1.5 A

High collector current rating allows for handling larger current loads, increasing versatility of applications.

Terminal Finish: MATTE TIN

Matte tin finish improves solderability and conductivity, enhancing overall performance and reliability.

Terminal Position: SINGLE

Simplified terminal configuration for easy integration and less complexity in circuit design.

Nominal Transition Frequency (fT): 75 MHz

High frequency capability allows for fast switching speeds, ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD13616STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD13616STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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