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BD136G

Onsemi

BD136G by Onsemi

The Onsemi BD136G is a PNP BJT transistor with max VCEsat of 5V, ideal for amplifier applications. It has a max power dissipation of 12.5W and max collector-emitter voltage of 45V. With a min hFE of 25, it operates in temperatures ranging from -55 to 150°C.

Median Price

$0.500

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 12 parts In-Stock

1+ parts

$0.069

100+ parts

$0.069

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$0.069

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$0.069

12

$0.069

$0.069

$0.069

$0.069

Arrow

USA . 201 parts In-Stock

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$0.275

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201

$0.275

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Farnell

UK . 1,368 parts In-Stock

1+ parts

$0.517

100+ parts

$0.216

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-

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1,368

$0.517

$0.216

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Mouser Electronics

USA . 4,444 parts In-Stock

1+ parts

$1.510

100+ parts

$0.636

1k+ parts

$0.417

10k+ parts

$0.408

4,444

$1.510

$0.636

$0.417

$0.408

DigiKey

USA . 1,512 parts In-Stock

1+ parts

$1.510

100+ parts

$0.635

1k+ parts

$0.454

10k+ parts

$0.356

1,512

$1.510

$0.635

$0.454

$0.356

Element14

Singapore . 1,168 parts In-Stock

1+ parts

$1.950

100+ parts

$0.921

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$0.591

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$0.580

1,168

$1.950

$0.921

$0.591

$0.580

Rochester

USA . 28,212 parts In-Stock

1+ parts

-

100+ parts

$0.484

1k+ parts

$0.402

10k+ parts

$0.358

28,212

-

$0.484

$0.402

$0.358

Verical

USA . 7,000 parts In-Stock

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$0.358

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7,000

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$0.358

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Chip1Stop

Japan . 54 parts In-Stock

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54

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Distributors (In-Stock)

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Digiode

USA . 491 parts In-Stock

1+ parts

$0.327

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491

$0.327

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Nova Conductors

Japan . 500 parts In-Stock

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$0.442

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500

$0.442

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VNN

France . 5,754 parts In-Stock

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Vyrian

USA . 4,526 parts In-Stock

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4,526

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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NAC Semi

USA . 1,000 parts In-Stock

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$0.664

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1,000

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$0.664

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IBS Electronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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$0.554

10k+ parts

$0.505

500

-

-

$0.554

$0.505

Mil-Aero Solutions, Inc.

USA . 87 parts In-Stock

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87

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LWI Electronics Inc

India . 45 parts In-Stock

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45

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South Electronics

USA . 19 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 461 parts In-Stock

1+ parts

$0.122

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461

$0.122

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Semicontronic

India . 4,741 parts In-Stock

1+ parts

$0.258

100+ parts

$0.252

1k+ parts

$0.250

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4,741

$0.258

$0.252

$0.250

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Ampacity Inc.

Singapore . 4,523 parts In-Stock

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$0.260

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4,523

$0.260

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Corphita

USA . 1,658 parts In-Stock

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$0.310

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1,658

$0.310

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Aztec Data Supply Inc.

USA . 2,007 parts In-Stock

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$0.360

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2,007

$0.360

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Argo Parts USA

USA . 1,748 parts In-Stock

1+ parts

$0.431

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$0.418

1,748

$0.431

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$0.418

Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.433

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$0.416

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500

$0.433

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$0.416

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Continental Prestige Electronics

USA . 2,305 parts In-Stock

1+ parts

$0.677

100+ parts

$0.453

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$0.293

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$0.275

2,305

$0.677

$0.453

$0.293

$0.275

Perfect Parts

USA . 9,868 parts In-Stock

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Authorized Procurement Solutions

USA . 9,500 parts In-Stock

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TANS Electronics

Latvia . 8,018 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,770 parts In-Stock

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4,770

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Alle Elektronik GmbH

Germany . 3,180 parts In-Stock

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Problanco Electronics

Mexico . 3,054 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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Kulean Microsystems

USA . 2,345 parts In-Stock

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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SupplyDigital Components

Austria . 743 parts In-Stock

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743

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT)? Look no further than the BD136G by Onsemi. With its PNP polarity, single configuration, and maximum VCEsat of 5V, this transistor is perfect for amplifier applications. Manufactured by Onsemi, a trusted name in the industry, the BD136G offers customers exceptional value and benefits. Whether you're looking to amplify signals or control power flow, this transistor delivers top-notch performance and reliability. Upgrade your electronics with the BD136G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures a durable and lightweight construction, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration is commonly used in amplifiers and switching circuits, offering versatility in design and functionality.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use for different projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification tasks.

Maximum VCEsat: 5 V

Low VCEsat helps minimize power loss and improve efficiency in amplifier circuits, leading to better overall performance.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various systems and devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals simplify soldering and circuit board assembly, ensuring secure connections for stable operation.

Maximum Power Dissipation (Abs): 12.5 W

High absolute maximum power dissipation rating allows for handling high power levels without risk of damage or overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure attachment and heat dissipation in applications that require a stable mounting solution.

Maximum Power Dissipation Ambient: 1.25 W

Low maximum power dissipation ambient helps in maintaining lower operating temperatures and extending the lifespan of the transistor.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain ensures reliable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in extreme conditions without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides versatility in circuit design and protection against voltage spikes or fluctuations.

Transistor Element Material: SILICON

Silicon transistor element material offers excellent performance, durability, and reliability in diverse amplifier applications.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range ensures the transistor can function effectively in cold environments or during temperature fluctuations.

Maximum Collector Current (IC): 1.5 A

High collector current rating supports the handling of increased current levels for efficient amplification and power delivery.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides reliable electrical conductivity and corrosion resistance for stable and long-lasting connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, ensuring ease of use and compatibility with standard circuit layouts.

Case Connection: COLLECTOR

Collector case connection facilitates easy integration into circuit configurations, enhancing overall performance and reliability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD136G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.25 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

5 V

Trade Compliance

BD136G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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