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KSA1220AYSTSTU

Fairchild Semiconductor

KSA1220AYSTSTU by Fairchild Semiconductor

KSA1220AYSTSTU by Fairchild is a PNP BJT transistor with 160 min hFE, 1.2A IC, and 175MHz fT. Ideal for amplifier applications, it has a max operating temperature of 150°C and can handle up to 20W power dissipation in a rectangular package with matte tin finish.

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Overview

Enhance your amplifier designs with the KSA1220AYSTSTU Power Bipolar Junction Transistor by Fairchild Semiconductor. As a trusted manufacturer in the industry, Fairchild ensures top-notch quality and reliability for all their products. This PNP transistor is perfect for amplifier applications, offering a maximum power dissipation of 20W and a collector-emitter voltage of 160V. With a minimum DC current gain of 160 and a maximum operating temperature of 150°C, this transistor provides exceptional performance and efficiency. Upgrade your amplifiers today with the KSA1220AYSTSTU and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits and can easily be integrated into existing systems.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and makes it easier to incorporate into different projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation (Abs): 20 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 160 V

With a high collector-emitter voltage, this transistor can handle higher voltages in the circuit.

Maximum Collector Current (IC): 1.2 A

Capable of handling high collector currents, making it suitable for applications requiring high power.

Nominal Transition Frequency (fT): 175 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220AYSTSTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA1220AYSTSTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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