Loading...

KSA1142Y

Onsemi

KSA1142Y by Onsemi

KSA1142Y by Onsemi is a PNP BJT transistor with 180V VCEO, 0.1A IC, and 160 hFE. Ideal for amplifier applications, it has a max power dissipation of 8W and operates up to 150°C. Its package style is flange mount with 3 terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,289

-

-

-

-

Vyrian

USA . 1,096 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,096

-

-

-

-

Nova Conductors

Japan . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 239 parts In-Stock

1+ parts

$0.836

100+ parts

-

1k+ parts

-

10k+ parts

-

239

$0.836

-

-

-

Aztec Data Supply Inc.

USA . 2,262 parts In-Stock

1+ parts

$1.852

100+ parts

-

1k+ parts

-

10k+ parts

-

2,262

$1.852

-

-

-

AZTECH Wire

Italy . 1,339 parts In-Stock

1+ parts

$8.422

100+ parts

-

1k+ parts

-

10k+ parts

-

1,339

$8.422

-

-

-

Andel Nordic

Denmark . 3,441 parts In-Stock

1+ parts

$10.055

100+ parts

-

1k+ parts

$9.653

10k+ parts

$9.653

3,441

$10.055

-

$9.653

$9.653

Semicontronic

India . 317 parts In-Stock

1+ parts

$11.050

100+ parts

$10.774

1k+ parts

$10.718

10k+ parts

-

317

$11.050

$10.774

$10.718

-

Ampacity Inc.

Singapore . 1,242 parts In-Stock

1+ parts

$47.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,242

$47.050

-

-

-

A-Z Elektronik GmbH

Germany . 7,038 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,038

-

-

-

-

TANS Electronics

Latvia . 6,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,107

-

-

-

-

Continental Prestige Electronics

USA . 5,239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,239

-

-

-

-

Alle Elektronik GmbH

Germany . 4,692 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,692

-

-

-

-

Argo Parts USA

USA . 4,621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,621

-

-

-

-

Kulean Microsystems

USA . 4,295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,295

-

-

-

-

Problanco Electronics

Mexico . 3,609 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,609

-

-

-

-

Aranea Global

USA . 2,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,050

-

-

-

-

Supply Digital

USA . 1,180 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,180

-

-

-

-

SupplyDigital Components

Austria . 1,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,060

-

-

-

-

UHIMA Technologies

Türkiye . 732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

732

-

-

-

-

Corphita

USA . 220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

220

-

-

-

-

Overview

Enhance your amplifier designs with the KSA1142Y by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled quality and performance. Its PNP configuration and high DC current gain of 160 make it ideal for amplifier applications. With a maximum VCEsat of just 0.5V, this transistor ensures efficient power management and minimal energy loss. Whether you're in the audio industry or electronic manufacturing, the KSA1142Y provides value, reliability, and superior functionality, setting you apart from the competition. Upgrade your projects today with Onsemi's top-of-the-line transistor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching circuits, making this product suitable for such applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in different electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

Maximum VCEsat: 0.5 V

Low saturation voltage results in minimal power loss and improved efficiency in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement onto circuit boards or other components.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and connect the transistor securely in place.

Maximum Power Dissipation (Abs): 8 W

High power dissipation capacity allows the transistor to handle larger loads and higher power applications.

Maximum Collector-Emitter Voltage: 180 V

With a high collector-emitter voltage rating, this transistor can withstand high voltage levels without breakdown.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1142Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

8 W

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSA1142Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20