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KSA1220A-Y

Onsemi

KSA1220A-Y by Onsemi

The Onsemi KSA1220A-Y is a PNP BJT transistor with max VCEsat of 0.7V, hFE of 160, and IC of 1.2A. Ideal for amplifier applications due to its high transition frequency of 175MHz and max power dissipation of 20W in a rectangular package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 2,289 parts In-Stock

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Vyrian

USA . 1,530 parts In-Stock

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TANS Electronics

Latvia . 6,294 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,993 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Corphita

USA . 2,678 parts In-Stock

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Kulean Microsystems

USA . 2,398 parts In-Stock

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Supply Digital

USA . 1,339 parts In-Stock

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SupplyDigital Components

Austria . 1,210 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 908 parts In-Stock

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Problanco Electronics

Mexico . 368 parts In-Stock

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Corohmni

South Africa . 149 parts In-Stock

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Overview

Enhance your amplifier designs with the KSA1220A-Y Power Bipolar Junction Transistor from Onsemi. With a maximum VCEsat of just 0.7V and a minimum DC Current Gain of 160, this PNP transistor offers high performance and reliability. Its package shape, rectangular design, and flange mount style make it easy to integrate into your projects. Ideal for applications requiring a collector-emitter voltage of up to 160V and a collector current of 1.2A, this transistor is a versatile solution for various amplifier needs. Trust in Onsemi's reputation for quality and innovation, and unlock the full potential of your designs with the KSA1220A-Y.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, increasing its durability and reliability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified setup with only one transistor, making it easier to handle and debug.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in amplifier circuits.

Maximum VCEsat: 0.7 V

Low VCEsat helps in minimizing power losses and improving efficiency in the circuit.

Terminal Form: THROUGH-HOLE

Easy to solder and mount on a PCB, suitable for manual assembly processes.

Maximum Power Dissipation (Abs): 20 W

Can handle high power levels without getting damaged, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 160 V

Can withstand high voltage levels, making it suitable for use in circuits with higher voltage requirements.

Maximum Collector Current (IC): 1.2 A

Capable of handling moderate current levels, suitable for applications requiring current amplification.

Nominal Transition Frequency (fT): 175 MHz

High transition frequency allows for faster switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1220A-Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

KSA1220A-Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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