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KSA1142YSTU

Onsemi

KSA1142YSTU by Onsemi

KSA1142YSTU by Onsemi is a PNP BJT transistor with hFE of 160, VCEO of 180V, and IC of 0.1A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 180MHz. The package style is flange mount with a rectangular shape and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,462 parts In-Stock

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Vyrian

USA . 1,237 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Corohmni

South Africa . 534 parts In-Stock

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$1.007

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534

$1.007

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Aztec Data Supply Inc.

USA . 1,009 parts In-Stock

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$1.356

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$1.356

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AZTECH Wire

Italy . 321 parts In-Stock

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$18.376

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321

$18.376

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Ampacity Inc.

Singapore . 653 parts In-Stock

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$51.050

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653

$51.050

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Semicontronic

India . 1,214 parts In-Stock

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$62.050

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$60.499

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$60.188

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$62.050

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Component Stockers USA

USA . 272 parts In-Stock

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$99.990

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Lixinc

USA . 11,357 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,893 parts In-Stock

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Kepictronics

USA . 6,500 parts In-Stock

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Continental Prestige Electronics

USA . 5,736 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Metaverse IC Inc.

Canada . 4,755 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,595 parts In-Stock

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Kulean Microsystems

USA . 3,484 parts In-Stock

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Corphita

USA . 2,846 parts In-Stock

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Argo Parts USA

USA . 2,774 parts In-Stock

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Problanco Electronics

Mexico . 2,764 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,530 parts In-Stock

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TANS Electronics

Latvia . 2,410 parts In-Stock

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SupplyDigital Components

Austria . 2,186 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 193 parts In-Stock

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Overview

Enhance your electronic projects with the KSA1142YSTU by Onsemi, a high-quality Power Bipolar Junction Transistor that delivers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for amplifier applications. With its durable plastic/epoxy package, matte tin terminal finish, and single terminal configuration, this transistor offers exceptional value and benefits to customers. Upgrade your designs with the KSA1142YSTU and experience the advantages of using top-notch components from a reputable manufacturer like Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and heat dissipation, making the transistor more reliable and durable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit functionality.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: AMPLIFIER

Optimized for amplification purposes, ensuring efficient performance in amplifiers.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering onto circuit boards.

Terminal Form: THROUGH-HOLE

Allows for secure mounting on PCBs and easy soldering.

No. of Terminals: 3

Simplified pin configuration for straightforward circuit connections.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting in various applications.

Minimum DC Current Gain (hFE): 160

Ensures consistent and controlled amplification in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 180 V

Can handle high voltage applications, increasing versatility.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance.

Terminal Position: SINGLE

Simplified pin configuration for easy circuit integration.

Nominal Transition Frequency (fT): 180 MHz

Suitable for high-frequency applications, such as RF amplifiers.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1142YSTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSA1142YSTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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