Loading...

KSA1142O

Onsemi

KSA1142O by Onsemi

KSA1142O by Onsemi is a PNP BJT transistor with VCEsat of 0.5V, hFE of 100, and IC of 0.1A. Ideal for amplifier applications, it has a max power dissipation of 8W and operates up to 150 °C. The transistor's package style is flange mount with 3 terminals in a rectangular shape.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,325 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,325

-

-

-

-

Digiode

USA . 276 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

276

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

GreenTree Electronics

Israel . 19,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,440

-

-

-

-

TANS Electronics

Latvia . 7,885 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,885

-

-

-

-

Kulean Microsystems

USA . 7,348 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,348

-

-

-

-

Supply Digital

USA . 1,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,860

-

-

-

-

Problanco Electronics

Mexico . 1,647 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,647

-

-

-

-

Corphita

USA . 1,203 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

-

-

-

-

UHIMA Technologies

Türkiye . 875 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

875

-

-

-

-

Corohmni

South Africa . 232 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

232

-

-

-

-

SupplyDigital Components

Austria . 22 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22

-

-

-

-

Overview

Discover the power and precision of the KSA1142O by Onsemi. Crafted with superior quality by a trusted manufacturer, this PNP power bipolar junction transistor is designed for amplifier applications. With a low VCEsat of 0.5V and high DC current gain of at least 100, this transistor delivers exceptional performance and efficiency. Perfect for flange mount applications, the KSA1142O offers a maximum collector-emitter voltage of 180V and can handle up to 8W of power dissipation. Unlock endless possibilities in your electronic projects with the reliable KSA1142O from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for use in various electronic applications.

Polarity or Channel Type: PNP

The PNP type allows for easy integration into circuits with other PNP components, providing compatibility and ease of use.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making the transistor a reliable choice for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and efficiency in amplifying signals.

Maximum VCEsat: 0.5 V

The low VCEsat value indicates minimal saturation voltage, resulting in efficient operation and reduced power loss.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on circuit boards, ensuring a secure and stable connection.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure mechanical and electrical connection, making it suitable for soldering onto PCBs.

Maximum Power Dissipation (Abs): 8 W

With a high maximum power dissipation, this transistor can handle large amounts of power, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and secure mounting, ensuring reliable performance in various environments.

Maximum Power Dissipation Ambient: 1.2 W

The low maximum power dissipation in ambient conditions helps prevent overheating and ensures stable operation in different temperature environments.

Minimum DC Current Gain (hFE): 100

The high DC current gain ensures efficient amplification of signals, providing reliable performance in amplifier circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for challenging environments.

Maximum Collector-Base Capacitance: 7 pF

The low collector-base capacitance minimizes signal distortion and ensures accurate amplification in high-frequency applications.

Maximum Collector-Emitter Voltage: 180 V

The high collector-emitter voltage rating allows for safe operation in circuits with varying voltage levels, enhancing reliability and performance.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high efficiency, low noise, and reliable operation in various electronic applications.

Maximum Collector Current (IC): 0.1 A

With a high maximum collector current rating, this transistor can handle significant current loads, making it suitable for high-power applications.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, ensuring easy integration into different circuit configurations.

Nominal Transition Frequency (fT): 180 MHz

The high nominal transition frequency allows for fast signal amplification and response, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) KSA1142O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

180 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.2 W

Maximum Power Dissipation (Abs):

8 W

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

KSA1142O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20